Theoretical study of the indium incorporation into III-V compounds revisited: The role of indium segregation and desorption

Author(s)

Pela, R. R. ^[1] ; Teles, L. K. ^[1] ; Marques, M. ^[1] ; Martini, S. ^[2]

Affiliation

^[1] Inst Tecnol Aeronaut, Grp Mat Semicond & Nanotecnol, BR-12228900 Sao Jose Dos Campos, SP - Brazil

^[2] Univ Sao Judas Tadeu, Fac Tecnol & Ciencias Exatas, Grp Pesquisa Microelet & Dispositivos Optoelect, BR-03166000 Sao Paulo - Brazil

• Document type: Journal article
• Source: Journal of Applied Physics; v. 113, n. 3 JAN 21 2013.
• Web of Science Citations: 4

Abstract

Indium based III-V compounds are very important technological materials. However, the indium incorporation depends on several phenomena, among them, the influence of indium segregation has been the most studied. In this paper, we show that to predict accurately the energy levels of In based III-V quantum structures, besides the indium segregation, the indium desorption must also be considered. In order to verify this assumption, we consider InGaAs/GaAs quantum wells as a benchmark case, and simulate 48 different quantum wells comparing with photoluminescence results. (C) 2013 American Institute of Physics. {[}http://dx.doi.org/10.1063/1.4776741] (AU)

• FAPESP's process: 08/11423-1 - Simulation of quantum devices based on spin
• Grantee: Ronaldo Rodrigues Pelá
• Support Opportunities: Scholarships in Brazil - Doctorate (Direct)
• FAPESP's process: 07/06117-6 - Simulation of quantum devices based on spin
• Grantee: Ronaldo Rodrigues Pelá
• Support Opportunities: Scholarships in Brazil - Master
• FAPESP's process: 06/05858-0 - Theoretical study of semiconductor alloys for applications in spintronics and optoelectronics
• Grantee: Lara Kühl Teles
• Support Opportunities: Research Grants - Young Investigators Grants