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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Synthesis and electrical characterization of Zn3P2 nanowires

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Author(s):
Kamimura, H. [1] ; Gouveia, R. C. [1] ; Dalmaschio, C. J. [2] ; Leite, E. R. [2] ; Chiquito, A. J. [1]
Total Authors: 5
Affiliation:
[1] Univ Fed Sao Carlos, Dept Fis, NanO LaB, BR-13565905 Sao Carlos, SP - Brazil
[2] Univ Fed Sao Carlos, Dept Quim, Lab Interdisciplinar Eletroquim & Ceram, BR-13565905 Sao Carlos, SP - Brazil
Total Affiliations: 2
Document type: Journal article
Source: Semiconductor Science and Technology; v. 29, n. 1 JAN 2014.
Web of Science Citations: 3
Abstract

Single crystalline Zn3P2 nanowires were synthesized on Si substrates via vapour phase deposition catalysed by In-Au seeds. Single nanowire devices were fabricated and the metal-Zn3P2 nanowire contacts were studied using a model based on two Schottky barriers as a function of temperature. As far we know, these are the first reported values of Schottky barriers of Ti/Zn3P2 nanowire contacts. The obtained values showed no significant dependence on the temperature, indicating that the defects at the nanowire's surfaces did not affect the device characteristics. We found evidence of an acceptor level at 49 meV, also indicating that the dominant transport mechanism is the thermal activation of carriers as is found in the bulk Zn3P2. It seems that the p-type behaviour is independent of the dimensionality of the Zn3P2 samples and primarily associated with the phosphorous interstitial atoms. (AU)

FAPESP's process: 09/51740-9 - Electron properties in nanostructures: metallic oxide nanowires
Grantee:Adenilson José Chiquito
Support type: Regular Research Grants
FAPESP's process: 12/06916-4 - Synthesis and properties of electron transport in semiconductor nanowires
Grantee:Hanay Kamimura
Support type: Scholarships in Brazil - Doctorate