Optical Properties and Surface morphology of ZnTe thin films prepared by multiple potential steps

Author(s)

Murilo F. Gromboni ^[1] ; Francisco W. S. Lucas ^[1] ; Lucia H. Mascaro ^[1]

Affiliation

^[1] Univ Fed Sao Carlos, Lab Eletroquim & Ceram LIEC, Dept Quim, BR-13565905 Sao Carlos, SP - Brazil

• Document type: Journal article
• Source: Journal of the Brazilian Chemical Society; v. 25, n. 3, p. 526-531, 2014-03-00.

Abstract

In this work, the ZnTe thin films were electrodeposited using potentiostatic steps, on Pt substrate. The effect of steps number, the deposition time for each element (Zn or Te) and layer order (Zn/Te or Te/Zn) in the morphology, composition, band gap energy and photocurrent was evaluated. Microanalysis data showed that the ratio Zn/Te ranged from 0.12 and 0.30 and the film was not stoichiometric. However, the band-gap value obtained from in all experimental conditions used in this work was 2.28 eV, indicating film growth of ZnTe. The samples with higher Zn showed higher photocurrent, which was of the order of 2.64 µA cm-2 and dendritic morphology. (AU)

• FAPESP's process: 12/10947-2 - Preparation and characterization of MBSe thin films (M = Ag or Cu; B = In, Ga, Sb or Tl; and S = S or Se) for application in photovoltaic cells
• Grantee: Francisco Willian de Souza Lucas
• Support Opportunities: Scholarships in Brazil - Doctorate
• FAPESP's process: 10/18134-5 - Synthesis and electrochemical characterization of thin films of Cd1-x ZnxTe, ZnSe and ZnTe
• Grantee: Lucia Helena Mascaro Sales
• Support Opportunities: Regular Research Grants
• FAPESP's process: 09/00788-1 - Preparation and characterization of ZnTe and ZnSe thin films for the ECALE technique
• Grantee: Murilo Fernando Gromboni
• Support Opportunities: Scholarships in Brazil - Doctorate (Direct)