Fluorine doped SnO2 (FTO) nanobelts: some data on electronic parameters

Author(s)

Amorim, Cleber A. ^[1] ; Dalmaschio, Cleocir J. ^[2] ; Leite, Edson R. ^[3] ; Chiquito, Adenilson J. ^[4]

Affiliation

^[1] Univ Fed Sao Carlos UFSCar. Dept Fis

^[2] Univ Fed Sao Carlos UFSCar. Dept Quim

^[3] Univ Fed Sao Carlos UFSCar. Dept Quim

^[4] Univ Fed Sao Carlos UFSCar. Dept Fis

• Document type: Journal article
• Source: JOURNAL OF PHYSICS D-APPLIED PHYSICS; v. 47, n. 4 JAN 29 2014.
• Web of Science Citations: 1

Abstract

Fluorine doped SnO2 (FTO) nanobelts were synthesized and their transport properties, such as conduction mechanism, mobility, carrier density and density of states (DOS) were investigated. Variable range hopping was observed as the dominant mechanism in a large range of temperature (40-260 K). Through these data we estimated the localization length and hopping distance at 300K of FTO nanobelts exhibiting a three-dimensional character for carrier transport. The carrier mobility was calculated to be 48 cm(2) V-1 s(-1) for samples with carrier density of 2 x 10(18) cm(-3). Taking into account the parameters obtained from temperature-dependent resistivity and the above data, the characteristic DOS at Fermi level in our samples was found. (AU)

• FAPESP's process: 11/10171-1 - Electronic transport and devices in diamond thin films
• Grantee: Adenilson José Chiquito
• Support Opportunities: Regular Research Grants