2D devices for optoeletronics

• Grant number: 19/23488-5
• Support Opportunities: Regular Research Grants
• Start date: February 01, 2021
• End date: January 31, 2023
• Field of knowledge: Physical Sciences and Mathematics - Physics - Condensed Matter Physics
• Principal Investigator: Yara Galvão Gobato
• Grantee: Yara Galvão Gobato
• Host Institution: Centro de Ciências Exatas e de Tecnologia (CCET). Universidade Federal de São Carlos (UFSCAR). São Carlos , SP, Brazil
• Associated researchers: Ingrid David Barcelos
• Associated research grant(s): 22/00419-0 - Van der Waals Heterostructures for Spintronics, AP.R SPRINT

Abstract

Here, we propose to investigate optical properties of van der Waals heterostructures based on monolayers of transition metal dichalcogenides materials. We will investigate the effect of voltage on excitonic effects of type II heteroestructure, hybridization of direct and indirect excitons, magnetic proximity effects, excitonic effects in anisotropic 2D materials, etc. (AU)

Scientific publications

(11)

(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)

TONG, CAPUCINE; BIDAUD, THOMAS; KOIVUSALO, EERO; PITON, MARCELO RIZZO; GUINA, MIRCEA; AVANCO GALETI, HELDER VINICIUS; GOBATO, YARA GALVAO; CATTONI, ANDREA; HAKKARAINEN, TEEMU; COLLIN, STEPHANE. athodoluminescence mapping of electron concentration in MBE-grown GaAs:Te nanowire. Nanotechnology, v. 33, n. 18, APR 30 2022. (14/50513-7, 19/23488-5, 19/07442-5)

ALHASSAN, SULTAN; DE SOUZA, DANIELE; ALHASSNI, AMRA; ALMUNYIF, AMJAD; ALOTAIBI, SAUD; ALMALKI, ABDULAZIZ; ALHUWAYZ, MARYAM; KAZAKOV, IGOR P.; KLEKOVKIN, V, ALEXEY; TSEKHOSH, I, VLADIMIR; et al. Investigation of the effect of substrate orientation on the structural, electrical and optical properties of n-type GaAs1-xBix layers grown by Molecular Beam Epitaxy. Journal of Alloys and Compounds, v. 885, DEC 10 2021. (19/07442-5, 19/23488-5)

AL HUWAYZ, M.; GALETI, H. V. A.; LEMINE, O. M.; IBNAOUF, K. H.; ALKAOUD, A.; ALASKAR, Y.; SALHI, A.; ALHASSAN, S.; ALOTAIBI, S.; ALMALKI, A.; et al. Optical properties of self-assembled InAs quantum dots based P-I-N structures grown on GaAs and Si substrates by Molecular Beam Epitaxy. Journal of Luminescence, v. 251, p. 6-pg., 2022-08-18. (19/23488-5)

GOBATO, Y. GALVAO; DE BRITO, C. SERATI; CHAVES, A.; PROSNIKOV, M. A.; WOZNIAK, T.; GUO, SHI; BARCELOS, INGRID D.; V. MILOSEVIC, M.; WITHERS, F.; CHRISTIANEN, P. C. M.. Distinctive g-Factor of Moire-Confined Excitons in van der Waals Heterostructures. Nano Letters, v. 22, n. 21, p. 6-pg., 2022-10-24. (18/01808-5, 14/07375-2, 19/14017-9, 15/13771-0, 19/23488-5)

TRENCH, ALINE B.; ALVAREZ, ROMAN; TEODORO, VINICIUS; DA TRINDADE, LETICIA G.; MACHADO, THALES R.; TEIXEIRA, MAYARA M.; DE SOUZA, DANIELE; PINATTI, IVO M.; SIMOES, ALEXANDRE Z.; GOBATO, YARA GALVAO; et al. Interface matters: Design of an efficient alpha-Ag2WO4/Ag3PO4 photocatalyst. Materials Chemistry and Physics, v. 280, p. 12-pg., 2022-02-12. (19/25944-8, 19/23488-5, 19/23488-5, 19/03722-3, 13/07296-2)

COVRE, F. S.; FARIA, P. E., JR.; GORDO, V. O.; DE BRITO, C. SERATI; ZHUMAGULOV, Y., V; TEODORO, M. D.; COUTO, O. D. D., JR.; MISOGUTI, L.; PRATAVIEIRA, S.; ANDRADE, M. B.; et al. Revealing the impact of strain in the optical properties of bubbles in monolayer MoSe2. NANOSCALE, v. 14, n. 15, p. 11-pg., 2022-03-22. (14/19142-2, 18/01808-5, 19/23488-5, 13/18719-1, 09/54035-4, 12/11382-9)

DE BRITO, CAIQUE SERATI; RABAHI, CESAR RICARDO; TEODORO, MARCIO DALDIN; FRANCO, DOUGLAS F.; NALIN, MARCELO; BARCELOS, INGRID D.; GOBATO, YARA GALVAO. Strain engineering of quantum confinement in WSe2 on nano-roughness glass substrates. Applied Physics Letters, v. 121, n. 7, p. 7-pg., 2022-08-15. (19/23488-5, 16/16900-9, 19/14017-9, 18/19272-4, 13/07793-6)

PRANDO, GABRIELA AUGUSTA; SEVERIJNEN, MARION E.; BARCELOS, INGRID D.; ZEITLER, ULI; CHRISTIANEN, PETER C. M.; WITHERS, FREDDIE; GOBATO, YARA GALVAO. Revealing Excitonic Complexes in Monolayer WS2 on Talc Dielectric. PHYSICAL REVIEW APPLIED, v. 16, n. 6, DEC 23 2021. (19/23488-5, 18/01808-5, 18/00823-0)

ALGHAMDI, HAIFA; ALHASSNI, AMRA; ALHASSAN, SULTAN; ALMUNYIF, AMJAD; KLEKOVKIN, ALEXEY, V; TRUNKIN, IGOR N.; VASILIEV, ALEXANDER L.; GALETI, HELDER V. A.; GOBATO, YARA GALVAO; KAZAKOV, IGOR P.; et al. Effect of bismuth surfactant on the structural, morphological and optical properties of self-assembled InGaAs quantum dots grown by Molecular Beam Epitaxy on GaAs (001) substrates. Journal of Alloys and Compounds, v. 905, p. 14-pg., 2022-02-14. (19/23488-5, 19/07442-5)

NUTTING, DARREN; PRANDO, GABRIELA A.; SEVERIJNEN, MARION; BARCELOS, INGRID D.; GUO, SHI; CHRISTIANEN, PETER C. M.; ZEITLER, ULI; GOBATO, YARA GALVAO; WITHERS, FREDDIE. Electrical and optical properties of transition metal dichalcogenides on talc dielectrics. NANOSCALE, v. 13, n. 37, AUG 2021. (19/23488-5, 18/00823-0, 18/01808-5)

MACHADO, EDUARDO G.; MARCHEZI, PAULO E.; THEREZIO, ERALCI M.; GERMINO, JOSE CARLOS; SZOSTAK, RODRIGO; DE BRITO, CAIQUE S.; GOBATO, YARA G.; PEREIRA, ERNESTO C.; TONEY, MICHAEL F.; NAGAO, RAPHAEL; et al. Light-induced halide segregation in perovskites with wrinkled morphology. JOURNAL OF ENERGY CHEMISTRY, v. 71, p. 6-pg., 2022-04-19. (17/11986-5, 13/07296-2, 17/00089-2, 19/23488-5, 14/50249-8, 16/01817-9, 17/12582-5)