Optoelectronic Integration Platform Based on Selective and Non-Selective Epitaxial Growth by Chemical Beam Epitaxy (CBE)

• Grant number: 98/14560-6
• Support Opportunities: Research Projects - Thematic Grants
• Start date: July 01, 1999
• End date: March 31, 2004
• Field of knowledge: Physical Sciences and Mathematics - Physics - Condensed Matter Physics
• Principal Investigator: Mauro Monteiro Garcia de Carvalho
• Grantee: Mauro Monteiro Garcia de Carvalho
• Host Institution: Instituto de Física Gleb Wataghin (IFGW). Universidade Estadual de Campinas (UNICAMP). Campinas , SP, Brazil

Abstract

We propose the development of a platform of growth techniques based on chemical beam epitaxy for the integration of optoelectronic devices. This platform will encompass traditional heterostructure epitaxial growth, as well as selective growth and pre-patterned substrate growth techniques. These miconductor materials upon which this study is based are the alloy compounds InGaP and InGaAs grown on GaAs substrates. In conjunction with the different growth techniques, we will develop semiconductor devices that will serve to evaluate the quality of the growth in each technique, as well as its potential as part of an optoelectronic integration strategy. The optoelectronic devices to be studied are. photodetectors, heterojunction bipolar transistors, field effect transistors and semiconductor lasers. (AU)