Conductor thin film deposition by resistive evaporation technique

• Grant number: 06/00480-9
• Support Opportunities: Regular Research Grants
• Start date: May 01, 2006
• End date: September 30, 2009
• Field of knowledge: Physical Sciences and Mathematics - Physics - Condensed Matter Physics
• Principal Investigator: Luis Vicente de Andrade Scalvi
• Grantee: Luis Vicente de Andrade Scalvi
• Host Institution: Faculdade de Ciências (FC). Universidade Estadual Paulista (UNESP). Campus de Bauru. Bauru , SP, Brazil

Abstract

The projetct can be divided in three main lines of research, which are related to que acquisition of an evaporator system, besides reagents and chemicals precursors to thin film deposition. In the first of these lines, we treat deposition and characterization of GaAs films intrinsic or doped with rare-earth ions. The second line evolves confection of electric contacts on several semiconductor thin films, mainly SnO2 and GaAs. In the third line of research we work with deposition of Al2O3 on GaAs, with potential utilization in high mobility transistors, and shall present low leakage current. (AU)

Scientific publications

(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)

LIMA, G. A. B.; FERREIRA, V. G.; CIRILO, E. R.; CASTELO, A.; CANDEZANO, M. A. C.; TASSO, I. V. M.; SANO, D. M. C.; SCALVI, L. V. A.. A continuously differentiable upwinding scheme for the simulation of fluid flow problems. Applied Mathematics and Computation, v. 218, n. 17, p. 8614-8633, MAY 1 2012. (09/16954-8, 04/16064-9, 06/00480-9)

MACHADO, DIEGO H. O.; SCALVI, LUIS V. A.; BUENO, CRISTINA F.. Photoluminescence of Rare-Earth Ions in the Nanocrystalline GaAs/SnO2 Heterostructure and the Photoinduced Electrical Properties Related to the Interface. CONDENSED MATTER, v. 2, n. 1, MAR 2017. (16/12216-6, 06/00480-9)