Carrier dinamics and quantum confinement in multi-component electron systems formed in heterostructured nanowires and in semiconductor multiple layers

• Grant number: 13/01840-2
• Support Opportunities: Regular Research Grants
• Start date: June 01, 2013
• End date: August 31, 2015
• Field of knowledge: Physical Sciences and Mathematics - Physics - Condensed Matter Physics
• Principal Investigator: Iouri Poussep
• Grantee: Iouri Poussep
• Host Institution: Instituto de Física de São Carlos (IFSC). Universidade de São Paulo (USP). São Carlos , SP, Brazil
• Associated researchers: Francisco Eduardo Gontijo Guimaraes

Abstract

Multi-component electron systems formed in one-dimensional (nanowires) and three-dimensional (multiple quantum wells) semiconductor hetero-structures will be investigated. We plan to study formation of electron states in conduction and valence bands in different hetero-structured multiple well GaAs/AlGaAs and InAs/InGaAs nanowires grown by molecular beam epitaxy using the time-resolved photoluminescence measurements. Moreover, the effects of electron-electron interaction in the conduction band and the interaction between the electrons in the conduction band and the holes in the valence band will be studied in multiple quantum wells based on GaAs/AlGaAs. The interaction among electrons essentially influences the distribution of charge over the quantum wells, while the magnetic field presents an external perturbation which influences the electron distribution. The time of recombination between the photoexcited electrons and holes fundamentally depends on their spatial localization. Therefore, the time-resolved photoluminescence presents a direct proof of the spatial distribution of the photoexcited carriers in semiconductor heterostructures. (AU)