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Sinthesys and caracterization of silicon nanowires

Grant number: 12/07041-1
Support Opportunities:Scholarships in Brazil - Scientific Initiation
Start date: July 01, 2012
End date: June 30, 2013
Field of knowledge:Physical Sciences and Mathematics - Physics - Condensed Matter Physics
Principal Investigator:Adenilson José Chiquito
Grantee:Leonardo Martins Amaral
Host Institution: Centro de Ciências Exatas e de Tecnologia (CCET). Universidade Federal de São Carlos (UFSCAR). São Carlos , SP, Brazil

Abstract

In this proposal, we propose the synthesis and study of structural properties of semiconductor silicon nanowires. The candidate must be familiar with some basic techniques for the growth of semiconductor nanostructures such as the VLS method and the experimental apparatus necessary for its implementation. In addition, the student will be familiar with structural characterization techniques widely used as x-ray diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM) and develops studies aimed at obtaining information on crystal structure, morphology, phase, and composition of the synthesized nanostructures. Such studies should facilitate the achievement of a synthesis route producing high-quality crystalline nanostructures. In a second step, the candidate should also become familiar with techniques of manufacture of electronic devices based on nanostructures, especially photolithography.(AU)

News published in Agência FAPESP Newsletter about the scholarship:
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