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Impact of III-V materials on tunneling field effect transistor (TFET) operating at different temperatures

Grant number: 15/09352-2
Support type:Scholarships abroad - Research Internship - Doctorate
Effective date (Start): October 01, 2015
Effective date (End): September 30, 2016
Field of knowledge:Engineering - Electrical Engineering
Principal Investigator:Paula Ghedini Der Agopian
Grantee:Caio Cesar Mendes Bordallo
Supervisor abroad: Cor Claeys
Home Institution: Escola Politécnica (EP). Universidade de São Paulo (USP). São Paulo , SP, Brazil
Local de pesquisa : IMEC Belgium, Belgium  
Associated to the scholarship:13/22594-0 - Study of tunnel field effect transistors behavior operating at different temperatures, BP.DR

Abstract

In order to continuing scaling devices, new technologies have been studied as an alternative to conventional CMOS. One of devices that can overcome the limitations of MOSFET transistors is the Tunnel-FET (TFET) that can provide very low off state current and a subthreshold swing lower than the 60 mV/dec at room temperature, the theoretical limit for MOS technology. In order to improve the on state current, III-V materials appear as a promising substitute for the source material of TFETs because its lower bandgap can increase the band to band tunneling promoting higher on state drain current and consequently improving the devices characteristics.This work, supervised by Prof. Dr. Cor Claeys, aims to study the influence of III-V materials in the source of TFETs on the electrical performance of advanced devices fabricated by imec/Belgium.In this work the main electrical parameters will be studied focusing on the analyzes of analog and noise parameters from experimental data, in order to better understand the influence of the use of III-V materials in the source of advanced TFET devices. (AU)