Study of tunnel field effect transistors behavior operating at different temperatures
| Grant number: | 15/09352-2 |
| Support type: | Scholarships abroad - Research Internship - Doctorate |
| Effective date (Start): | October 01, 2015 |
| Effective date (End): | September 30, 2016 |
| Field of knowledge: | Engineering - Electrical Engineering |
| Principal Investigator: | Paula Ghedini Der Agopian |
| Grantee: | Caio Cesar Mendes Bordallo |
| Supervisor abroad: | Cor Claeys |
| Home Institution: | Escola Politécnica (EP). Universidade de São Paulo (USP). São Paulo , SP, Brazil |
| Local de pesquisa : | IMEC Belgium, Belgium |
| Associated to the scholarship: | 13/22594-0 - Study of tunnel field effect transistors behavior operating at different temperatures, BP.DR |
Abstract In order to continuing scaling devices, new technologies have been studied as an alternative to conventional CMOS. One of devices that can overcome the limitations of MOSFET transistors is the Tunnel-FET (TFET) that can provide very low off state current and a subthreshold swing lower than the 60 mV/dec at room temperature, the theoretical limit for MOS technology. In order to improve the on state current, III-V materials appear as a promising substitute for the source material of TFETs because its lower bandgap can increase the band to band tunneling promoting higher on state drain current and consequently improving the devices characteristics.This work, supervised by Prof. Dr. Cor Claeys, aims to study the influence of III-V materials in the source of TFETs on the electrical performance of advanced devices fabricated by imec/Belgium.In this work the main electrical parameters will be studied focusing on the analyzes of analog and noise parameters from experimental data, in order to better understand the influence of the use of III-V materials in the source of advanced TFET devices. (AU) | |