Optical and Transport Properties in High Magnetic Fields of Semiconductor Heterostructures and Devices based on Two Dimensional Materials

• Grant number: 18/01808-5
• Support Opportunities: Scholarships abroad - Research
• Start date: September 03, 2018
• End date: July 31, 2019
• Field of knowledge: Physical Sciences and Mathematics - Physics - Condensed Matter Physics
• Principal Investigator: Yara Galvão Gobato
• Grantee: Yara Galvão Gobato
• Host Investigator: Peter C.M. Christianen
• Host Institution: Centro de Ciências Exatas e de Tecnologia (CCET). Universidade Federal de São Carlos (UFSCAR). São Carlos , SP, Brazil
• Institution abroad: Radboud University Nijmegen, Netherlands

Abstract

In this proposal, we will investigate optical and transport properties of two dimensional (2D) semiconductors. The proposal will be focused on the investigation of physical properties of 2D semiconductor heterostructures/devices.

Scientific publications

(14)

(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)

COVRE, F. S.; FARIA, P. E., JR.; GORDO, V. O.; DE BRITO, C. SERATI; ZHUMAGULOV, Y., V; TEODORO, M. D.; COUTO, O. D. D., JR.; MISOGUTI, L.; PRATAVIEIRA, S.; ANDRADE, M. B.; et al. Revealing the impact of strain in the optical properties of bubbles in monolayer MoSe2. NANOSCALE, v. 14, n. 15, p. 11-pg., 2022-03-22. (14/19142-2, 18/01808-5, 19/23488-5, 13/18719-1, 09/54035-4, 12/11382-9)

GOBATO, Y. GALVAO; DE BRITO, C. SERATI; CHAVES, A.; PROSNIKOV, M. A.; WOZNIAK, T.; GUO, SHI; BARCELOS, INGRID D.; V. MILOSEVIC, M.; WITHERS, F.; CHRISTIANEN, P. C. M.. Distinctive g-Factor of Moire-Confined Excitons in van der Waals Heterostructures. Nano Letters, v. 22, n. 21, p. 6-pg., 2022-10-24. (18/01808-5, 14/07375-2, 19/14017-9, 15/13771-0, 19/23488-5)

DE SOUZA, DANIELE; ALHASSAN, SULTAN; ALOTAIBI, SAUD; ALHASSNI, AMRA; ALMUNYIF, AMJAD; ALBALAWI, HIND; KAZAKOV, IGOR P.; KLEKOVKIN, V, ALEXEY; ZINOVEV, SERGEY A.; LIKHACHEV, IGOR A.; et al. Structural and optical properties of n-type and p-type GaAs(1-x)Bi (x) thin films grown by molecular beam epitaxy on (311)B GaAs substrates. Semiconductor Science and Technology, v. 36, n. 7, JUL 2021. (19/07442-5, 18/01808-5)

BHUNIA, AMIT; SINGH, MOHIT KUMAR; GOBATO, Y. GALVAO; HENINI, MOHAMED; DATTA, SHOUVIK. Experimental Detection and Control of Trions and Fermi-Edge Singularity in Single-Barrier GaAs/AlAs/GaAs Heterostructures Using Photocapacitance Spectroscopy. PHYSICAL REVIEW APPLIED, v. 10, n. 4, OCT 17 2018. (18/01808-5, 16/10668-7)

PITON, MARCELO RIZZO; KOIVUSALO, EERO; HAKKARAINEN, TEEMU; AVANCO GALETI, HELDER VINICIUS; RODRIGUES, ARIANO DE GIOVANNI; TALMILA, SOILE; SOUTO, SERGIO; LUPO, DONALD; GOBATO, YARA GALVAO; GUINA, MIRCEA. Gradients of Be-dopant concentration in self-catalyzed GaAs nanowires. Nanotechnology, v. 30, n. 33, AUG 16 2019. (14/50513-7, 18/01808-5, 16/10668-7)

HAKKARAINEN, TEEMU; PITON, MARCELO RIZZO; FIORDALISO, ELISABETTA MARIA; LESHCHENKO, EGOR D.; KOELLING, SEBASTIAN; BETTINI, JEFFERSON; AVANCO GALETI, HELDER VINICIUS; KOIVUSALO, EERO; GOBATO, YARA GALVA; RODRIGUES, ARIANO DE GIOVANNI; et al. Te incorporation and activation as n-type dopant in self-catalyzed GaAs nanowires. PHYSICAL REVIEW MATERIALS, v. 3, n. 8, AUG 5 2019. (18/01808-5, 14/50513-7, 16/10668-7)

PRANDO, GABRIELA AUGUSTA; SEVERIJNEN, MARION E.; BARCELOS, INGRID D.; ZEITLER, ULI; CHRISTIANEN, PETER C. M.; WITHERS, FREDDIE; GOBATO, YARA GALVAO. Revealing Excitonic Complexes in Monolayer WS2 on Talc Dielectric. PHYSICAL REVIEW APPLIED, v. 16, n. 6, DEC 23 2021. (19/23488-5, 18/01808-5, 18/00823-0)

ALGHAMDI, HAIFA; GORDO, VANESSA ORSI; SCHMIDBAUER, MARTIN; FELIX, JORLANDIO F.; ALHASSAN, SULTAN; ALHASSNI, AMRA; PRANDO, GABRIELA AUGUSTA; COELHO-JUNIOR, HORACIO; GUNES, MUSTAFA; AVANCO GALETI, HELDER VINICIUS; et al. Effect of thermal annealing on the optical and structural properties of (311)B and (001) GaAsBi/GaAs single quantum wells grown by MBE. Journal of Applied Physics, v. 127, n. 12, MAR 31 2020. (19/07442-5, 18/01808-5, 16/10668-7)

TEIXEIRA, MAYARA MONDEGO; GOBATO, YARA GALVA; GRACIA, LOURDES; DA SILVA, LUIS FERNANDO; AVANSI JR, WALDIR; ASSIS, MARCELO; DE OLIVEIRA, REGIANE CRISTINA; PRANDO, GABRIELA AUGUSTA; ANDRES, JUAN; LONGO, ELSON. Towards a white-emitting phosphor Ca10V6O25 based material. Journal of Luminescence, v. 220, APR 2020. (18/01808-5, 13/07296-2)

NUTTING, DARREN; PRANDO, GABRIELA A.; SEVERIJNEN, MARION; BARCELOS, INGRID D.; GUO, SHI; CHRISTIANEN, PETER C. M.; ZEITLER, ULI; GOBATO, YARA GALVAO; WITHERS, FREDDIE. Electrical and optical properties of transition metal dichalcogenides on talc dielectrics. NANOSCALE, v. 13, n. 37, AUG 2021. (19/23488-5, 18/00823-0, 18/01808-5)

ASSIS, MARCELO; RIBEIRO, RENAN A. P.; CARVALHO COSTA, MARIA HELENA; MONDEGO TEIXEIRA, MAYARA; GALVAO GOBATO, YARA; PRANDO, GABRIELA A.; RENATO MENDONCA, CLEBER; DE BONI, LEONARDO; APARECIDO DE OLIVEIRA, ADILSON JESUS; BETTINI, JEFFERSON; et al. Unconventional Magnetization Generated from Electron Beam and Femtosecond Irradiation on alpha-Ag2WO4: A Quantum Chemical Investigation. ACS OMEGA, v. 5, n. 17, p. 10052-10067, MAY 5 2020. (18/11283-7, 13/07296-2, 16/10668-7, 16/20886-1, 18/01808-5, 17/24995-2)

SINGH, MOHIT KUMAR; BHUNIA, AMIT; AL HUWAYZ, MARYAM; GOBATO, Y. GALVAO; HENINI, MOHAMED; DATTA, SHOUVIK. Role of interface potential barrier, Auger recombination and temporal coherence in In0.5Ga0.5As/GaAs quantum dot-based p-i-n light emitting diodes. JOURNAL OF PHYSICS D-APPLIED PHYSICS, v. 52, n. 9, FEB 27 2019. (18/01808-5, 16/10668-7)

AL MASHARY, FAISAL S.; FELIX, JORLANDIO F.; FERREIRA, SUKARNO O.; DE SOUZA, DANIELE; GOBATO, YARA G.; CHAUHAN, JASBINDER; ALEXEEVA, NATALIA; HENINI, MOHAMED; ALBADRI, ABDULRAHMAN M.; ALYAMANI, AHMED Y.. Investigation of the structural, optical and electrical properties of indium-doped TiO2 thin films grown by Pulsed Laser Deposition technique on low and high index GaAs planes. MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, v. 259, SEP 2020. (18/01808-5, 16/10668-7)

BALANTA, M. A. G.; DE OLIVEIRA, P. B. A.; ALBALAWI, H.; GOBATO, Y. GALVAO; GALETI, H. V. A.; RODRIGUES, A. D.; HENINI, M.; ALMOSNI, S.; ROBERT, C.; BALOCCHI, A.; et al. Effects of nitrogen incorporation and thermal annealing on the optical and spin properties of GaPN dilute nitride alloys (vol 814, 15223, 2020). Journal of Alloys and Compounds, v. 817, p. 1-pg., 2020-03-15. (14/50513-7, 18/01808-5, 16/10668-7)