Study of beta-Ga2O3 schottky diode aiming solar-blind applications

• Grant number: 19/14366-3
• Support Opportunities: Scholarships abroad - Research Internship - Master's degree
• Start date: October 30, 2019
• End date: February 13, 2020
• Field of knowledge: Engineering - Materials and Metallurgical Engineering
• Principal Investigator: Neri Alves
• Grantee: Douglas Henrique Vieira
• Supervisor: Jeff Kettle
• Host Institution: Faculdade de Ciências e Tecnologia (FCT). Universidade Estadual Paulista (UNESP). Campus de Presidente Prudente. Presidente Prudente , SP, Brazil
• Institution abroad: Bangor University, Wales
• Associated to the scholarship: 18/04169-3 - Development of a UV photodetector using a Schottky diode and a transistor based on ZnO by spray pyrolysis, BP.MS

Abstract

An interesting way to produce an UV sensor is integrating a diode and a transistor. However, if you want to fabricate this circuit without encapsulation, it's necessary use a blocking filter to prevent devices parameters change. Gallium oxide (Ga2O3) is an interesting material due its large bandgap of ~4.9 eV that makes it an ideal candidate for solar-blind devices and deep UV sensor. The ² phase of Ga2O3 is the most chemically, thermodynamically stable and because of that is the most used in the electronic devices applications. That material phase also presents great potential because its support high electrical field, which is advantageous for the reduction of device size and enhancement of the integration level of power modules. Our goal is to obtain ²-Ga2O3 films by thermal evaporation or spray pyrolysis of a precursor gallium acetylacetonate (Ga(acac)3), aiming it's applications as solar-blind transistor in a UV photodetector. For this we will characterize the film morphology, structure and optical properties. Also we will use the Schottky diode setup as device test to start the electrical characterization properties of the films. (AU)

Scientific publications

(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)

VIEIRA, DOUGLAS H.; BADIEI, NAFISEH; EVANS, JONATHAN E.; ALVES, NERI; KETTLE, JEFF; LI, LIJIE. Improvement of the Deep UV Sensor Performance of a beta-Ga2O3 Photodiode by Coupling of Two Planar Diodes. IEEE TRANSACTIONS ON ELECTRON DEVICES, v. 67, n. 11, p. 4947-4952, NOV 2020. (19/14366-3)

VIEIRA, DOUGLAS H.; BADIEI, NAFISEH; EVANS, JONATHAN E.; ALVES, NERI; KETTLE, JEFF; LI, LIJIE; IEEE. Electrical characterisation of beta-Ga2O3 Schottky diode for deep UV sensor applications. 2020 IEEE SENSORS, v. N/A, p. 4-pg., 2020-01-01. (19/14366-3)