Deposition of transparent heterostructures of ZrO2 associated with oxide semiconductor SnO2, with potential use in optoelectronic devices

• Grant number: 21/04144-3
• Support Opportunities: Scholarships in Brazil - Scientific Initiation
• Start date: September 01, 2021
• End date: February 28, 2022
• Field of knowledge: Engineering - Materials and Metallurgical Engineering - Nonmetallic Materials
• Principal Investigator: Luis Vicente de Andrade Scalvi
• Grantee: Lucas Prado Fonseca
• Host Institution: Faculdade de Ciências (FC). Universidade Estadual Paulista (UNESP). Campus de Bauru. Bauru , SP, Brazil

Abstract

The present proposal deals with the deposition of layers of zirconium oxide (ZrO2), oxide with insulating characteristics, via sol-gel (chemical process). In addition to the investigation of these layers, it is also proposed to combine with SnO2 layers creating a simple transparent device, based on the SnO2/ZrO2 heterojunctions. The main idea of the project is the use of these oxides for the conduction channel (SnO2) and electrical insulation functions in a transparent field-effect transistor (FET), which will be built in a simple way, with potential application in optoelectronics. Although it is not a priority in this project, it is important to mention that the combination of these oxides has also led to the optimization of devices for gas sensing. Alternatively, it is also proposed to add an intermediate layer of polystyrene (PS) nanoparticles. The student has been working in this line of research for the past two years, so that the 8 months of scholarship requested in this project are enough to achieve good results, this time until reaches his graduation. (AU)

Scientific publications

(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)

FONSECA, LUCAS P.; SCALVI, LUIS V. A.. Zirconium oxide film deposition properties to build transparent electronic devices in conjunction with tin dioxide. INTERNATIONAL JOURNAL OF MODERN PHYSICS B, v. 36, n. 22, p. 15-pg., 2022-09-10. (21/04144-3)

DE OLIVEIRA, LETICIA DA S.; FONSECA, LUCAS P.; DE SOUZA, RENATO D.; BUENO, CRISTINA DE F.; MARTINS, LUCAS M.; SCALVI, LUIS V. A.. Deposition of hybrid structures of reduced graphene oxide and tin dioxide thin films, and persistent photoconductivity observation. CURRENT APPLIED PHYSICS, v. 41, p. 10-pg., 2022-09-01. (21/04144-3)