Optical pattern generator for lithography masks and direct write
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Author(s): |
Hamilton Fernandes de Moraes Junior
Total Authors: 1
|
Document type: | Master's Dissertation |
Press: | São Paulo. |
Institution: | Universidade de São Paulo (USP). Escola Politécnica (EP/BC) |
Defense date: | 2001-10-26 |
Examining board members: |
Antonio Carlos Seabra;
Jose Augusto de Alencar Mendes Pereira;
Murilo Araujo Romero
|
Advisor: | Antonio Carlos Seabra |
Abstract | |
In this work we studied the application of electron beam lithography to the fabrication of integrated microoptics elements with continuous relief. We also studied the preparation of PMMA Elvacite 2041 polymer and the influence of parameters such as development time, post esposure bake (PEB), electron beam energy and type of solvent used, in the contrast and sensitivity values. It was also used the software CASINO, dedicated to electron beam lithography simulation, for the prediction of profiles of the microelements fabricated. The results showed an accuracy in film thickness of 7% and mean roughness below 10 nm. The ideal parameters found for processing, that provide a better sensitivity and contrast value, were 30 keV electron beam energy for exposure post exposure bake of 300 seg for 130´DEGREE´C followed by 120 seg of development time in pure MIBK. The simulations predicted the order of the parameters correctly and were used for obtaining the microlenses. We also concluded that the determination of the characteristic file of the process, from which the simulator starts to obtain the profiles, should be built using structures with 1´MICROM´ width and not 30´MICROM´ width as described in the manufacturer´s manual. (AU) |