Full text
| |
| Author(s): |
Rafael Vinicius Tayette da Nobrega
Total Authors: 1
|
| Document type: | Master's Dissertation |
| Press: | São Carlos. |
| Institution: | Universidade de São Paulo (USP). Escola de Engenharia de São Carlos (EESC/SBD) |
| Defense date: | 2010-07-22 |
| Examining board members: |
Murilo Araujo Romero;
Guilherme Matos Sipahi;
João Navarro Soares Júnior
|
| Advisor: | Murilo Araujo Romero |
| Abstract | |
This dissertation discusses the development of analytical and numerical models for the electrical characteristics of quantum wire transistors. A study is carried out, implementing a sequence of formalisms and computational tools for the self-consistent solution of the equations of Schrödinger and Poisson in quantum wells and quantum wires. By using this numerical formulation it is possible to determine the eigenstates, energy levels and free-carrier electronic density, among other relevant parameters for quantum wire devices. In addition, we also conducted an analytical study concerning semiconductor heetrostrucures of interest for reduced dimensionality devices applications. This study led to results regarding the development of theoretical models for the electrical characteristics of devices based on the resonant tunneling mechanism. The results obtained for the current-voltage (I-V) characteristics in the investigated heterostructures were satisfactorily compared to those available at the published literature and this analytical tool was then used to compute the electronic transmission coefficient in a resonant tunneling quantum wire diode. (AU) | |