Effects of Be acceptors on the spin polarization of carriers in p-i-n resonant tunneling diodes

Author(s)

Awan, I. T. ^[1] ; Galeti, H. V. A. ^[2] ; Galvao Gobato, Y. ^[1] ; Brasil, M. J. S. P. ^[3] ; Taylor, D. ^[4] ; Henini, M. ^[4]

Affiliation

^[1] Univ Fed Sao Carlos UFSCAR, Dept Fis, BR-13560905 Sao Carlos, SP - Brazil

^[2] Univ Fed Sao Carlos, Dept Engn Eletr, BR-13560905 Sao Carlos, SP - Brazil

^[3] Univ Estadual Campinas, Inst Phys Gleb Wataghin, Campinas, SP - Brazil

^[4] Univ Nottingham, Sch Phys & Astron, Nottingham Nanotechnol & Nanosci Ctr, Nottingham NG7 2RD - England

• Document type: Journal article
• Source: Journal of Applied Physics; v. 116, n. 5 AUG 7 2014.
• Web of Science Citations: 0

Abstract

In this paper, we have investigated the effect of Be acceptors on the electroluminescence and the spin polarization in GaAs/AlAs p-i-n resonant tunneling diodes. The quantum well emission comprise two main lines separated by similar to 20meV attributed to excitonic and Be-related transitions, which intensities show remarkably abrupt variations at critical voltages, particularly at the electron resonant peak where it shows a high-frequency bistability. The circular-polarization degree of the quantum-well electroluminescence also shows strong and abrupt variations at the critical bias voltages and it attains relatively large values (of similar to-75% at 15 T). These effects may be explored to design novel devices for spintronic applications such as a high-frequency spin-oscillators. (C) 2014 AIP Publishing LLC. (AU)

• FAPESP's process: 11/20985-6 - Spin of carriers in semiconductor structures investigated by optical techniques
• Grantee: Maria José Santos Pompeu Brasil
• Support Opportunities: Regular Research Grants
• FAPESP's process: 12/24055-6 - Optical, electrical and spin properties of semiconductor nanostructures and nanodevices
• Grantee: Yara Galvão Gobato
• Support Opportunities: Regular Research Grants