| Full text | |
| Author(s): |
Total Authors: 4
|
| Affiliation: | [1] Univ Estadual Campinas, Inst Fis Gleb Wataghin, BR-13083970 Campinas, SP - Brazil
[2] Univ Estadual Paulista, Dept Fis, Rio Claro, SP - Brazil
Total Affiliations: 2
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| Document type: | Journal article |
| Source: | Physical Chemistry Chemical Physics; v. 16, n. 44, p. 24570-24574, 2014. |
| Web of Science Citations: | 0 |
| Abstract | |
In this work we report new silicon and germanium tubular nanostructures with no corresponding stable carbon analogues. The electronic and mechanical properties of these new tubes were investigated through ab initio methods. Our results show that these structures have lower energy than their corresponding nanoribbon structures and are stable up to high temperatures (500 and 1000 K, for silicon and germanium tubes, respectively). Both tubes are semiconducting with small indirect band gaps, which can be significantly altered by both compressive and tensile strains. Large bandgap variations of almost 50% were observed for strain rates as small as 3%, suggesting their possible applications in sensor devices. They also present high Young's modulus values (0.25 and 0.15 TPa, respectively). TEM images were simulated to help in the identification of these new structures. (AU) | |
| FAPESP's process: | 13/08293-7 - CCES - Center for Computational Engineering and Sciences |
| Grantee: | Munir Salomao Skaf |
| Support Opportunities: | Research Grants - Research, Innovation and Dissemination Centers - RIDC |
| FAPESP's process: | 11/17253-3 - Dynamics of formation, electronic and structural properties of graphene and similar compounds |
| Grantee: | Ricardo Paupitz Barbosa dos Santos |
| Support Opportunities: | Regular Research Grants |