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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

One-dimensional silicon and germanium nanostructures with no carbon analogues

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Author(s):
Perim, E. [1] ; Paupitz, R. [2] ; Botari, T. [1] ; Galvao, D. S. [1]
Total Authors: 4
Affiliation:
[1] Univ Estadual Campinas, Inst Fis Gleb Wataghin, BR-13083970 Campinas, SP - Brazil
[2] Univ Estadual Paulista, Dept Fis, Rio Claro, SP - Brazil
Total Affiliations: 2
Document type: Journal article
Source: Physical Chemistry Chemical Physics; v. 16, n. 44, p. 24570-24574, 2014.
Web of Science Citations: 0
Abstract

In this work we report new silicon and germanium tubular nanostructures with no corresponding stable carbon analogues. The electronic and mechanical properties of these new tubes were investigated through ab initio methods. Our results show that these structures have lower energy than their corresponding nanoribbon structures and are stable up to high temperatures (500 and 1000 K, for silicon and germanium tubes, respectively). Both tubes are semiconducting with small indirect band gaps, which can be significantly altered by both compressive and tensile strains. Large bandgap variations of almost 50% were observed for strain rates as small as 3%, suggesting their possible applications in sensor devices. They also present high Young's modulus values (0.25 and 0.15 TPa, respectively). TEM images were simulated to help in the identification of these new structures. (AU)

FAPESP's process: 11/17253-3 - Dynamics of formation, electronic and structural properties of graphene and similar compounds
Grantee:Ricardo Paupitz Barbosa dos Santos
Support type: Regular Research Grants
FAPESP's process: 13/08293-7 - CCES - Center for Computational Engineering and Sciences
Grantee:Munir Salomao Skaf
Support type: Research Grants - Research, Innovation and Dissemination Centers - RIDC