Bias current influence on semiconductor optical amplifier's equivalent circuit

Author(s)

Figueiredo, Rafael C. ^[1] ; Ribeiro, Napoleao S. ^[1] ; Gallep, Cristiano M. ^[2] ; Conforti, Evandro ^[1]

Affiliation

^[1] Univ Estadual Campinas, Fac Elect & Comp Engn, DECOM FEEC, Dept Commun, BR-13083852 Campinas, SP - Brazil

^[2] Univ Estadual Campinas, Fac Technol, Div Telecommun Technol, BR-13484370 Limeira, SP - Brazil

• Document type: Journal article
• Source: Optics Communications; v. 336, p. 153-159, FEB 1 2015.
• Web of Science Citations: 9

Abstract

The equivalent electrical circuits - including the parasitic elements and their variations with the injected bias current - for three semiconductor optical amplifiers (SOA) were obtained. Frequency domain measurements with further tuning of numerical modeling parameters were used to extract circuit parameters. Characterization of chip-on-carrier and encapsulated devices agree with numerical data up to 20 GHz. The results are relevant for designing fast speed, SOA-gated switches in optical routers. (C) 2014 Elsevier B.V All rights reserved. (AU)

• FAPESP's process: 05/51689-2 - Optics and Photonics Research Center at UNICAMP
• Grantee: Hugo Luis Fragnito
• Support Opportunities: Research Grants - Research, Innovation and Dissemination Centers - RIDC
• FAPESP's process: 07/56024-4 - Coherent optical technologies
• Grantee: Evandro Conforti
• Support Opportunities: Research Grants - Research Partnership for Technological Innovation - PITE