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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Strain and localization effects in InGaAs(N) quantum wells: Tuning the magnetic response

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Author(s):
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Lopes-Oliveira, V. [1] ; Herval, L. K. S. [1] ; Orsi Gordo, V. [1] ; Cesar, D. F. [1] ; de Godoy, M. P. F. [1] ; Galvao Gobato, Y. [1] ; Henini, M. [2] ; Khatab, A. [2, 3] ; Sadeghi, M. [4] ; Wang, S. [4] ; Schmidbauer, M. [5]
Total Authors: 11
Affiliation:
[1] Univ Fed Sao Carlos, Dept Fis, BR-13565905 Sao Paulo - Brazil
[2] Univ Nottingham, Sch Phys & Astron, Nottingham Nanotechnol & Nanosci Ctr, Nottingham NG7 2RD - England
[3] Cairo Univ, Natl Inst Laser Enhanced Sci, Cairo - Egypt
[4] Chalmers, Photon Lab, Dept Microtechnol & Nanosci, S-41296 Gothenburg - Sweden
[5] Leibniz Inst Crystal Growth, D-12489 Berlin - Germany
Total Affiliations: 5
Document type: Journal article
Source: Journal of Applied Physics; v. 116, n. 23 DEC 21 2014.
Web of Science Citations: 5
Abstract

We investigated effects of localization and strain on the optical and magneto-optical properties of diluted nitrogen III-V quantum wells theoretically and experimentally. High-resolution x-ray diffraction, photoluminescence (PL), and magneto-PL measurements under high magnetic fields up to 15 T were performed at low temperatures. Bir-Pikus Hamiltonian formalism was used to study the influence of strain, confinement, and localization effects. The circularly polarized magneto-PL was interpreted considering localization aspects in the valence band ground state. An anomalous behavior of the electron-hole pair magnetic shift was observed at low magnetic fields, ascribed to the increase in the exciton reduced mass due to the negative effective mass of the valence band ground state. (C) 2014 AIP Publishing LLC. (AU)

FAPESP's process: 13/17657-2 - Synthesis and optical properties of semiconductor systems for spintronics
Grantee:Marcio Peron Franco de Godoy
Support Opportunities: Regular Research Grants
FAPESP's process: 12/24055-6 - Optical, electrical and spin properties of semiconductor nanostructures and nanodevices
Grantee:Yara Galvão Gobato
Support Opportunities: Regular Research Grants
FAPESP's process: 11/17944-6 - New nanooptical and nanoelectronic systems: characterization and application
Grantee:Daniel Ferreira Cesar
Support Opportunities: Scholarships in Brazil - Post-Doctoral
FAPESP's process: 12/02655-1 - Nanooptical systems and nanoelectronic devices
Grantee:Victor Lopez Richard
Support Opportunities: Regular Research Grants