Frequency- and time-domain simulations of semiconductor optical amplifiers using equivalent circuit modeling

Author(s)

Figueiredo, Rafael C. ^[1] ; Ribeiro, Napoleao S. ^[1] ; Gallep, Cristiano M. ^[2] ; Conforti, Evandro ^[1]

Affiliation

^[1] Univ Estadual Campinas, Dept Commun, Fac Elect & Comp Engn, BR-13083852 Campinas, SP - Brazil

^[2] Univ Estadual Campinas, Div Telecommun Technol, Fac Technol, BR-13484370 Limeira, SP - Brazil

• Document type: Journal article
• Source: Optical Engineering; v. 54, n. 11 NOV 2015.
• Web of Science Citations: 4

Abstract

We propose an equivalent circuit modeling for a chip-on-carrier and for two encapsulated semiconductor optical amplifiers (SOAs). The models include main parasitic leaks and were used in reflection and transmission simulations, showing good agreement with experimental data. The model for each SOA is validated, comparing the simulated results with experimental data from SOAs operating as high-speed electro-optical switches, reaching rise times below 200 ps. (C) 2015 Society of Photo-Optical Instrumentation Engineers (SPIE) (AU)

• FAPESP's process: 05/51689-2 - Optics and Photonics Research Center at UNICAMP
• Grantee: Hugo Luis Fragnito
• Support Opportunities: Research Grants - Research, Innovation and Dissemination Centers - RIDC
• FAPESP's process: 07/56024-4 - Coherent optical technologies
• Grantee: Evandro Conforti
• Support Opportunities: Research Grants - Research Partnership for Technological Innovation - PITE