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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Investigation of trapping levels in p-type Zn(3)P(2 )nanowires using transport and optical properties

Full text
Author(s):
Lombardi, G. A. [1] ; de Oliveira, F. M. [2] ; Teodoro, M. D. [2] ; Chiquito, A. J. [1]
Total Authors: 4
Affiliation:
[1] Univ Fed Sao Carlos, Dept Fis, NanO LaB, CP 676, BR-13565905 Sao Carlos, SP - Brazil
[2] Univ Fed Sao Carlos, Dept Fis, Grp Nanoestruturas Semicond, CP 676, BR-13565905 Sao Carlos, SP - Brazil
Total Affiliations: 2
Document type: Journal article
Source: Applied Physics Letters; v. 112, n. 19 MAY 7 2018.
Web of Science Citations: 3
Abstract

Here, we report the synthesis and structural characterization of high-quality Zn3P2 nanowires via chemical vapour deposition. Structural and morphological characterization studies revealed a reliable growth process of long, uniform, and single-crystalline nanowires. From temperature dependent transport and photoluminescence measurements, we have observed the contribution of different acceptor levels (15, 50, 70, 90, and 197 meV) to the conduction mechanisms. These levels were associated with zinc vacancies and phosphorous interstitial atoms which assigned a p-type character to this semiconductor. From time resolved photoluminescence experiments, a 91 ps lifetime decay was found. Such a fast lifetime decay is in agreement with the exciton transition along the bulk emission from high quality crystalline nanowires. Published by AIP Publishing. (AU)

FAPESP's process: 13/18719-1 - Electronic carriers dynamics in semiconductor nanostructures
Grantee:Marcio Daldin Teodoro
Support type: Research Grants - Young Investigators Grants
FAPESP's process: 13/17639-4 - Obtainment of nanostructured semiconductors: correlation of the photocatalytic properties to their structural characteristic
Grantee:Waldir Avansi Junior
Support type: Regular Research Grants
FAPESP's process: 14/19142-2 - Characterization and processing of semiconductor nanostructures and application as devices
Grantee:Gilmar Eugenio Marques
Support type: Research Projects - Thematic Grants
FAPESP's process: 16/14381-4 - Semiconducting nanowires for fotovoltaic devices
Grantee:Adenilson José Chiquito
Support type: Regular Research Grants