Advanced search
Start date
Betweenand
(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Optical Absorption Exhibits Pseudo-Direct Band Gap of Wurtzite Gallium Phosphide

Full text
Author(s):
da Silva, Bruno C. [1] ; Couto Jr, Odilon D. D. ; Obata, Helio T. [2, 3] ; de Lima, Mauricio M. [4] ; Bonani, Fabio D. [5, 1] ; de Oliveira, Caio E. [5, 1] ; Sipahi, Guilherme M. [5] ; Iikawa, Fernando [2, 3] ; Cotta, Monica A. [2, 3]
Total Authors: 9
Affiliation:
[1] Univ Estadual Campinas, Inst Phys Gleb Wataghin, BR-13083859 Campinas - Brazil
[2] Couto Jr, Jr., Odilon D. D., Univ Estadual Campinas, Inst Phys Gleb Wataghin, BR-13083859 Campinas - Brazil
[3] Couto Jr, Jr., Odilon D. D., Sipahi, Guilherme M., Univ Sao Paulo, Sao Carlos Inst Phys, BR-13566590 Sao Carlos, SP, Brazil.da Silva, Bruno C., Univ Estadual Campinas, Inst Phys Gleb Wataghin, BR-13083859 Campinas - Brazil
[4] Univ Valencia, Mat Sci Inst, Valencia 46071 - Spain
[5] Univ Sao Paulo, Sao Carlos Inst Phys, BR-13566590 Sao Carlos, SP - Brazil
Total Affiliations: 5
Document type: Journal article
Source: SCIENTIFIC REPORTS; v. 10, n. 1 MAY 13 2020.
Web of Science Citations: 1
Abstract

Definitive evidence for the direct band gap predicted for Wurtzite Gallium Phosphide (WZ GaP) nanowires has remained elusive due to the lack of strong band-to-band luminescence in these materials. In order to circumvent this problem, we successfully obtained large volume WZ GaP structures grown by nanoparticle-crawling assisted Vapor-Liquid-Solid method. With these structures, we were able to observe bound exciton recombination at 2.14 eV with FHWM of approximately 1 meV. In addition, we have measured the optical absorption edges using photoluminescence excitation spectroscopy. Our results show a 10 K band gap at 2.19 eV and indicate a weak oscillator strength for the lowest energy band-to-band absorption edge, which is a characteristic feature of a pseudo-direct band gap semiconductor. Furthermore, the valence band splitting energies are estimated as 110 meV and 30 meV for the three highest bands. Electronic band structure calculations using the HSE06 hybrid density functional agree qualitatively with the valence band splitting energies. (AU)

FAPESP's process: 15/16611-4 - III-V semiconductor nanowires: synthesis studies for biology applications
Grantee:Mônica Alonso Cotta
Support type: Regular Research Grants
FAPESP's process: 16/16365-6 - Nanostructures of III-V semiconductors and their optical properties
Grantee:Fernando Iikawa
Support type: Regular Research Grants
FAPESP's process: 15/24271-9 - P-N junctions in III-V semiconductor nanowires: a platform for applied studies
Grantee:Bruno César da Silva
Support type: Scholarships in Brazil - Doctorate
FAPESP's process: 12/11382-9 - Optical modulation of semiconductor nanostructures using surface acoustic waves
Grantee:Odilon Divino Damasceno Couto Júnior
Support type: Research Grants - Young Investigators Grants