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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Investigation on the optical and electrical properties of undoped and Sb-doped SnO2 nanowires obtained by the VLS method

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Author(s):
Costa, I. M. [1, 2] ; Cunha, T. R. [1] ; Cichetto Jr, L. ; Zaghete, M. A. [2] ; Chiquito, A. J. [3]
Total Authors: 5
Affiliation:
[1] Univ Fed Sao Carlos, Dept Fis, BR-13565905 Sao Carlos, SP - Brazil
[2] Univ Estadual Paulista UNESP, Inst Quim, LIEC, BR-14800060 Araraquara, SP - Brazil
[3] Cichetto Jr, Jr., L., Univ Fed Sao Carlos, Dept Fis, BR-13565905 Sao Carlos, SP - Brazil
Total Affiliations: 3
Document type: Journal article
Source: PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES; v. 134, OCT 2021.
Web of Science Citations: 0
Abstract

In this work, we report the effects of Sb doping on the optical and electrical properties of the SnO2 nanowires obtained by the vapor-liquid-solid (VLS) method. The absorption edges were found to be 3.30 eV and 3.66 eV for undoped SnO2 and Sb-doped SnO2 (ATO) nanowires, respectively. The energy shift was related to the BursteinMoss effect taking place in the doped nanowires. We studied the ATO optical bandgap (Delta E = 0.36 eV) shift as a function of carrier concentration. The incorporation of Sb caused the resistivity to decrease three orders of magnitude for single-nanowire ATO devices. In addition, it was found that undoped SnO2 nanowires exhibit semiconductor characteristics while a metal-insulator transition (MIT), around 170 K, was observed in the ATO nanowires. (AU)

FAPESP's process: 19/12383-8 - Study of structural and vibrational properties of glass and glass-ceramic materials via Raman scattering as a function of temperature and high hydrostatic pressures.
Grantee:Thiago Rodrigues da Cunha
Support Opportunities: Scholarships in Brazil - Post-Doctoral
FAPESP's process: 17/23663-6 - Irradiation by femtosecond laser in thin films of LaNiO3 deposited by PLD for study of structural and physical properties for application in ferroelectric memories
Grantee:Leonélio Cichetto Junior
Support Opportunities: Scholarships abroad - Research Internship - Post-doctor
FAPESP's process: 13/07296-2 - CDMF - Center for the Development of Functional Materials
Grantee:Elson Longo da Silva
Support Opportunities: Research Grants - Research, Innovation and Dissemination Centers - RIDC
FAPESP's process: 14/01371-5 - Obtention of memories with LaNiO3 and LaNiO3/BaTiO3 using PLD
Grantee:Leonélio Cichetto Junior
Support Opportunities: Scholarships in Brazil - Post-Doctoral