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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Detection of H-2 facilitated by ionic liquid gating of tungsten oxide films

Full text
Author(s):
Barbosa, Martin S. [1, 2, 3] ; da Silva, Ranilson A. [2] ; Santato, Clara [3] ; Orlandi, Marcelo O. [2]
Total Authors: 4
Affiliation:
[1] Univ Fed Goias, Inst Quim, Av Esperanca, S-N Chacaras Recreio Samambaia, BR-74690900 Goiania, Go - Brazil
[2] Sao Paulo State Univ, Dept Fis Engn & Matemat, Rua Prof Degni 55, BR-14800060 Araraquara, SP - Brazil
[3] Polytech Montreal, Dept Genie Phys, CP 6079, Montreal, PQ H3C 3A7 - Canada
Total Affiliations: 3
Document type: Journal article
Source: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A; v. 40, n. 1 JAN 2022.
Web of Science Citations: 0
Abstract

Molecular hydrogen (H-2) shows promise as a future renewable energy carrier. However, due to safety concerns, its reliable detection in different atmospheres is an important issue. Here, we propose a hydrogen sensor based on ion-gated transistors exploiting the interface between tungsten oxide and ionic liquids. Two different approaches to gas sensors (metal oxide gas sensor and ionic liquid-based electrochemical sensor) are integrated in a single device. We demonstrate that ionic liquid gating enhances the effect of H-2 on the tungsten oxide transistor channel. The transistor current response permits the detection of H-2 in an O-2-free environment with the device operating in room temperature. After H-2 sensing, the initial properties of the tungsten oxide channel can be recovered by exposure to O-2. (AU)

FAPESP's process: 14/27079-9 - Electrolyte-Gated transistors based on WO3 thin films: influence of the morphology and structure of the films on the device performance
Grantee:Martin Schwellberger Barbosa
Support Opportunities: Scholarships in Brazil - Doctorate
FAPESP's process: 15/50526-4 - Electrolyte gating of metal oxide films:towards low power and printable electronics
Grantee:Marcelo Ornaghi Orlandi
Support Opportunities: Regular Research Grants
FAPESP's process: 16/09033-7 - Electrolyte-gated transistors based on WO3 films
Grantee:Martin Schwellberger Barbosa
Support Opportunities: Scholarships abroad - Research Internship - Doctorate