| Full text | |
| Author(s): |
Fonte, E. T.
;
Trevisoli, R.
;
Doria, R. T.
;
IEEE
Total Authors: 4
|
| Document type: | Journal article |
| Source: | 2021 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS); v. N/A, p. 4-pg., 2021-01-01. |
| Abstract | |
A study of Junctionless Transistors (JNTs) is presented in this work, with emphasis on verifying the extraction of the interface traps density using the charge pumping method. To the best of our knowledge, this is the first work to use this method in JNTs. The method was applied to both simulated and experimental data and has shown satisfactory results. (AU) | |
| FAPESP's process: | 19/15500-5 - Atomistic simulation of nanowire MOSFETs electrical properties |
| Grantee: | Marcelo Antonio Pavanello |
| Support Opportunities: | Regular Research Grants |