Investigation of the Invariant Drain Current Point in Dielectric Modulated (SOI)-S-BE MOSFET Biosensor

Author(s)

Yojo, Leonardo S. ; Rangel, Ricardo C. ; Sasaki, Katia R. A. ; Martino, Joao A. ; IEEE

• Document type: Journal article
• Source: 2021 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS); v. N/A, p. 4-pg., 2021-01-01.

Abstract

The study of a dielectric-modulated biosensor built on the (SOI)-S-BE MOSFET structure showed a crossing point of the transfer characteristics curves for target biomaterials with different dielectric constants (CID - Current Invariant Dielectric). The CID corresponds to an insensitive region for biosensing application, although it can be interesting as a reference signal measurement. It was evaluated that this behavior arises from the threshold shift and the transconductance increase as a function of the biomaterial dielectric constant. The gate voltage at the crossing point presented higher variation as a function of the metal gate-semiconductor workfunction difference, when compared to the influence of the programming gate voltage and the gate oxide charge concentration. (AU)

• FAPESP's process: 18/01568-4 - BE SOI MOSFET transistors optimization for biosensor platform application
• Grantee: Leonardo Shimizu Yojo
• Support Opportunities: Scholarships in Brazil - Doctorate