Analysis of Variability in Transconductance and Mobility of Nanowire Transistors

Author(s)

Barbosa da Silva, Lucas Mota ; Pavanello, Marcelo Antonio ; Casse, Mikael ; Barraud, Sylvain ; Vinet, Maud ; Faynot, Olivier ; de Souza, Michelly ; IEEE

• Document type: Journal article
• Source: 2022 36TH SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY (SBMICRO 2022); v. N/A, p. 4-pg., 2022-01-01.

Abstract

This work presents a comparison between the variability in junctionless nanowire transistors and inversion-mode nanowire transistors, looking at the transconductance, low-field mobility, linear and quadratic mobility degradation coefficients. To extract these parameters, the Y-Function method has been used. The obtained results shows differences in mobility and transconductance matching coefficients, indicating that mobility influence is not the only source of transconductance variation. (AU)

• FAPESP's process: 19/15500-5 - Atomistic simulation of nanowire MOSFETs electrical properties
• Grantee: Marcelo Antonio Pavanello
• Support Opportunities: Regular Research Grants