| Full text | |
| Author(s): |
Costa, Fernando J.
;
Trevisoli, Renan
;
Doria, Rodrigo T.
;
IEEE
Total Authors: 4
|
| Document type: | Journal article |
| Source: | 2022 IEEE LATIN AMERICAN ELECTRON DEVICES CONFERENCE (LAEDC); v. N/A, p. 4-pg., 2022-01-01. |
| Abstract | |
The main objective of this work is to present an analysis of the performance of Ultra-Thin-Body and Buried Oxide transistors working as Ultra-Low-Power diodes. The implementation of different ground planes and substrate biases are analyzed. It is shown a reduced leakage current and increased ratio between the on and off-state currents for the Ultra-Low-Power diode with the N-substrate biased at -2V. However, this condition results in increased threshold voltage. The ground planes do not provoke a significant change in the leakage current, but a noticeable variation can be observed in the ratio between the on and off-state currents due to the higher threshold voltage in relation to the system without ground plane. (AU) | |
| FAPESP's process: | 19/15500-5 - Atomistic simulation of nanowire MOSFETs electrical properties |
| Grantee: | Marcelo Antonio Pavanello |
| Support Opportunities: | Regular Research Grants |