Experimental Comparison of Junctionless and Inversion-Mode Nanowire MOSFETs Electrical Properties at High Temperatures

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Author(s):	Prates, Rhaycen R. ; Barraud, Sylvain ; Casse, Mikael ; Vinet, Maud ; Faynot, Olivier ; Pavanello, Marcelo A. ; IEEE Total Authors: 7
Document type:	Journal article
Source:	2022 36TH SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY (SBMICRO 2022); v. N/A, p. 4-pg., 2022-01-01.
Abstract
This work aims to present the electrical properties of junctionless and inversion-mode nanowires MOSFETs in the temperature range from 300 K to 580 K. Devices with different fin widths are compared. The comparison is performed using experimental data looking for some of the fundamental electrical parameters of these transistors such as threshold voltage, inverse subthreshold slope, current, and carrier mobility over the temperature. (AU)

FAPESP's process:	19/15500-5 - Atomistic simulation of nanowire MOSFETs electrical properties
Grantee:	Marcelo Antonio Pavanello
Support Opportunities:	Regular Research Grants