NBTI Dependence on Temperature in Junctionless Nanowire Transistors

Author(s)

Graziano Junior, N. ; Trevisoli, R. ; Doria, R. T. ; IEEE

• Document type: Journal article
• Source: 35TH SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO2021); v. N/A, p. 4-pg., 2021-01-01.

Abstract

This paper discusses the nature of degradation by NBTI effect in pMOS junctionless devices when varying the temperature. The results were obtained through simulations validated to experimental data. Devices with different dimensions and doping, have been subjected to a temperature range that varies between 270 and 380 K. The simulations were performed for different values of V-GT and as a result it is possible to observe that when increasing temperature up to 340 K, the threshold voltage variation due to NBTI is also increased. However, for larger temperatures the NBTI effect seems to stabilize or even reduce. (AU)

• FAPESP's process: 19/15500-5 - Atomistic simulation of nanowire MOSFETs electrical properties
• Grantee: Marcelo Antonio Pavanello
• Support Opportunities: Regular Research Grants