Advanced search
Start date
Betweenand


Revealing the impact of strain in the optical properties of bubbles in monolayer MoSe2

Full text
Author(s):
Show less -
Covre, F. S. ; Faria, P. E., Jr. ; Gordo, V. O. ; de Brito, C. Serati ; Zhumagulov, Y., V ; Teodoro, M. D. ; Couto, O. D. D., Jr. ; Misoguti, L. ; Pratavieira, S. ; Andrade, M. B. ; Christianen, P. C. M. ; Fabian, J. ; Withers, F. ; Gobato, Y. Galvao
Total Authors: 14
Document type: Journal article
Source: NANOSCALE; v. 14, n. 15, p. 11-pg., 2022-03-22.
Abstract

Strain plays an important role for the optical properties of monolayer transition metal dichalcogenides (TMDCs). Here, we investigate strain effects in a monolayer MoSe2 sample with a large bubble region using mu-Raman, second harmonic generation (SHG), mu-photoluminescence and magneto mu-photoluminescence at low temperature. Remarkably, our results reveal the presence of a non-uniform strain field and the observation of emission peaks at lower energies which are the signatures of exciton and trion quasiparticles red-shifted by strain effects in the bubble region, in agreement with our theoretical predictions. Furthermore, we have observed that the emission in the strained region decreases the trion binding energy and enhances the valley g-factors as compared to non-strained regions. Considering uniform biaxial strain effects within the unit cell of the TMDC monolayer (ML), our first principles calculations predict the observed enhancement of the exciton valley Zeeman effect. In addition, our results suggest that the exciton-trion fine structure plays an important role for the optical properties of strained TMDC ML. In summary, our study provides fundamental insights on the behaviour of excitons and trions in strained monolayer MoSe2 which are particularly relevant to properly characterize and understand the fine structure of excitonic complexes in strained TMDC systems/devices. (AU)

FAPESP's process: 14/19142-2 - Characterization and processing of semiconductor nanostructures and application as devices
Grantee:Gilmar Eugenio Marques
Support Opportunities: Research Projects - Thematic Grants
FAPESP's process: 18/01808-5 - Optical and Transport Properties in High Magnetic Fields of Semiconductor Heterostructures and Devices based on Two Dimensional Materials
Grantee:Yara Galvão Gobato
Support Opportunities: Scholarships abroad - Research
FAPESP's process: 19/23488-5 - 2D devices for optoeletronics
Grantee:Yara Galvão Gobato
Support Opportunities: Regular Research Grants
FAPESP's process: 13/18719-1 - Electronic carriers dynamics in semiconductor nanostructures
Grantee:Marcio Daldin Teodoro
Support Opportunities: Research Grants - Young Investigators Grants
FAPESP's process: 09/54035-4 - Facility for advanced studies of biosystems and nanostructured materials
Grantee:Igor Polikarpov
Support Opportunities: Multi-user Equipment Program
FAPESP's process: 12/11382-9 - Optical modulation of semiconductor nanostructures using surface acoustic waves
Grantee:Odilon Divino Damasceno Couto Júnior
Support Opportunities: Research Grants - Young Investigators Grants