Physical Insights on the Dynamic Response of Junctionless Nanowire Transistors

Author(s)

Doria, Rodrigo T. ; Trevisoli, Renan ; de Souza, Michelly ; Pavanello, Marcelo A. ; IEEE

• Document type: Journal article
• Source: 2016 31ST SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO); v. N/A, p. 4-pg., 2016-01-01.

Abstract

The aim of this work is to present, for the first time, an analysis of the maximum oscillation frequency (f(max)) presented by Junctionless Nanowire Transistors (JNTs) as well as its impact and the carriers transit time on the minimum switching time of these devices. It has been observed that despite presenting lower f(max) than inversion mode devices, f(max) of JNTs is benefited by its lower capacitances along a large interval in its operation range. Also, it has been shown that the transit time can significantly influence on the minimum switching time of long devices, since it can be larger than the minimum oscillation time, what does not occur in shorter JNTs. (AU)

• FAPESP's process: 14/18041-8 - Electrical characterization and modeling of advanced electronic devices
• Grantee: Renan Trevisoli Doria
• Support Opportunities: Scholarships in Brazil - Post-Doctoral