| Full text | |
| Author(s): |
Costa, Fernando J.
;
Trevisoli, Renan
;
Doria, Rodrigo T.
;
IEEE
Total Authors: 4
|
| Document type: | Journal article |
| Source: | 2020 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS); v. N/A, p. 4-pg., 2020-01-01. |
| Abstract | |
The main goal of this work is to perform an analysis for the first time of the thermal cross-coupling of a self-heated device on a neighbor device in advanced UTBB SOI MOSFETs through 2D numerical simulations, validated with experimental data from the literature. In this work, it could be observed that the self-heating of a device can affect the performance of a neighbor one according to the distance between them and to the bias conditions. By varying the distance of the devices from 1 mu m to 25 nm, it is shown an influence of the temperature rise due to a self-heated device in threshold voltage, subthreshold swing and in the maximum transconductance as well an increase of more than 50% in the thermal resistance. (AU) | |
| FAPESP's process: | 14/18041-8 - Electrical characterization and modeling of advanced electronic devices |
| Grantee: | Renan Trevisoli Doria |
| Support Opportunities: | Scholarships in Brazil - Post-Doctoral |