| Author(s): |
Ribeiro, T. A.
;
Pavanello, M. A.
;
IEEE
Total Authors: 3
|
| Document type: | Journal article |
| Source: | LATIN AMERICAN ELECTRON DEVICES CONFERENCE (LAEDC 2020); v. N/A, p. 4-pg., 2020-01-01. |
| Abstract | |
This work studies the effects of the temperature from 300K to 500K on the electrical parameters of SOI n-type junctionless nanowire transistors. The temperature influence on the threshold voltage and the effective carrier mobility were analyzed for narrow fin width. The mobility scattering mechanisms were analyzed and show that nanowire devices have the phonon scattering as it major component, although there is a significant component of the ionized impurity scattering that can be identified as well. (AU) | |
| FAPESP's process: | 16/10832-1 - Evaluation and Modeling of Charge Transport in Nanometer MOSFETs for CMOS Circuit Design |
| Grantee: | Thales Augusto Ribeiro |
| Support Opportunities: | Scholarships in Brazil - Doctorate |