Neutron-induced effects on a commercial GaN High Electron Mobility Transistor

Author(s):Show less -

Vilas Boas, Alexis Cristiano ; Alberton, Saulo Gabriel ; Garcia, Paulo Roberto ; Medina, Nilberto H. ; Aguiar, Vitor Angelo P. ; Melo, Marco Antonio A. ; Santos, Roberto Baginski B. ; Giacomini, Renato C. ; Cavalcante, Tassio, V ; Seixas Jr, Luis Eduardo ; Finco, Saulo ; Palomo Pinto, Francisco Rogelio ; Guazzelli, Marcilei

• Document type: Journal article
• Source: 2024 38TH SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES, SBMICRO 2024; v. N/A, p. 4-pg., 2024-01-01.

Abstract

This work explores the effects observed in a commercial-off-the-shelf (COTS) GaN HEMT when exposed to a monoenergetic 14 MeV fast neutron source. The results emphasize the significance of both the device's technology and the neutron source set up for such conditions. (AU)

• FAPESP's process: 22/09131-0 - Total Ionizing Dose Effect on PMOS Power Transistors
• Grantee: Paulo Roberto Garcia Junior
• Support Opportunities: Scholarships in Brazil - Scientific Initiation
• FAPESP's process: 23/16053-8 - Ionic Beam System for IRradiation and Applications (SAFIIRA)
• Grantee: Nilberto Heder Medina
• Support Opportunities: Regular Research Grants
• FAPESP's process: 20/04867-2 - High energy physics and instrumentation with the LHC-CERN
• Grantee: Marcelo Gameiro Munhoz
• Support Opportunities: Special Projects
• FAPESP's process: 18/25225-9 - São Paulo Research and Analysis Center
• Grantee: Sergio Ferraz Novaes
• Support Opportunities: Special Projects