Influence of the source/drain doping region on the reconfigurability of ^BESOI MOSFET

Author(s)

Ramos, Daniel A. ; Sasaki, Katia R. A. ; Rangel, Ricardo C. ; Duarte, Pedro H. ; Martino, Joao A.

• Document type: Journal article
• Source: 2023 37TH SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES, SBMICRO; v. N/A, p. 4-pg., 2023-01-01.

Abstract

This paper studies experimentally the influence of the N+ doped source/drain regions on the back enhanced with separate contacts SOI MOSFET ((SOI)-S-BE SC MOSFET) reconfigurability. The reconfigurable FET (RFET) proposed in this paper resulted in a drain current level in the same order of magnitude for both types of configurations (nMOS and pMOS). These results present a significant balanced drain current compared with the others (SOI)-S-BE device fabrications versions. In (SOI)-S-BE SC MOSFET, with programming gate voltage of vertical bar V-GB vertical bar=30V and drain voltage vertical bar V-D vertical bar=0.1V, the BESOI drain current reaches a value of, approximately, -1.4 mu A and 1.6 mu A, working as pMOS and nMOS respectively, which can be considered very well balanced. (AU)

• FAPESP's process: 20/04867-2 - High energy physics and instrumentation with the LHC-CERN
• Grantee: Marcelo Gameiro Munhoz
• Support Opportunities: Special Projects