Graded-channel fully depleted silicon-on-insulator nMOSFET for reducing the parasitic bipolar effects

Pavanello‚ M.A.; Martino‚ J.A.; Flandre‚ D.

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(Reference retrieved automatically from Google Scholar through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Graded-channel fully depleted silicon-on-insulator nMOSFET for reducing the parasitic bipolar effects

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Author(s):	Pavanello‚ M.A. ; Martino‚ J.A. ; Flandre‚ D. Total Authors: 3
Document type:	Journal article
Source:	Solid-State Electronics; v. 44, n. 6, p. 917-922, 2000.

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