| Full text | |
| Author(s): |
Total Authors: 4
|
| Affiliation: | [1] Univ Fed Sao Carlos, Dept Engn Eletr, BR-13565905 Sao Carlos, SP - Brazil
[2] Univ Estadual Campinas, UNICAMP, Inst Fis Gleb Wataghin, BR-13083970 Campinas, SP - Brazil
[3] Univ Fed Sao Carlos, Dept Fis, BR-13565905 Sao Carlos, SP - Brazil
[4] Univ Nottingham, Sch Phys & Astron, Nottingham Nanotechnol & Nanosci Ctr, Nottingham NG7 2RD - England
Total Affiliations: 4
|
| Document type: | Journal article |
| Source: | JOURNAL OF PHYSICS D-APPLIED PHYSICS; v. 47, n. 16 APR 25 2014. |
| Web of Science Citations: | 1 |
| Abstract | |
We investigate the electron spin dynamics in a p-type GaAs/AlAs resonant tunnelling device by measuring the time-and polarized-resolved photoluminescence (PL) from the GaAs quantum well under a high magnetic field (15 T). The voltage dependence of the PL transients have revealed various tunnelling processes with different time constants that give rise to distinct spin-polarized carriers injected into the double-barrier structure. (AU) | |
| FAPESP's process: | 11/20985-6 - Spin of carriers in semiconductor structures investigated by optical techniques |
| Grantee: | Maria José Santos Pompeu Brasil |
| Support Opportunities: | Regular Research Grants |
| FAPESP's process: | 12/24055-6 - Optical, electrical and spin properties of semiconductor nanostructures and nanodevices |
| Grantee: | Yara Galvão Gobato |
| Support Opportunities: | Regular Research Grants |