SIMULATED STUDY OF THE OPERATION OF ADVANCED TRANSISTORS IN HARSH ENVIRONMENTS

• Grant number: 25/05680-7
• Support Opportunities: Regular Research Grants
• Start date: September 01, 2025
• End date: August 31, 2028
• Field of knowledge: Engineering - Electrical Engineering
• Principal Investigator: Vanessa Cristina Pereira da Silva Venuto
• Grantee: Vanessa Cristina Pereira da Silva Venuto
• Host Institution: Escola de Engenharia de São Carlos (EESC). Universidade de São Paulo (USP). São Carlos , SP, Brazil

Abstract

In recent decades, there has been a growing need for integrated circuits (ICs) that are faster and consume less power. As a result, the demand for devices capable of meeting these expectations has increased. This has driven research fields to strive even harder to create devices with innovative geometries and new materials in order to achieve the desired performance while reducing or even eliminating the influence of undesirable effects. As new structures with increasingly smaller dimensions are developed, technological evolution is set to meet the expectations established by Moore's Law.Transistors are the main components implemented in electronic circuits, making it essential to understand their behavior under various operating conditions. An agile and effective method for analyzing transistors operating in harsh environments is through numerical device simulation. By simulating the device, it is possible to predict its behavior when temperature varies. In the automotive industry, for example, circuits are exposed to high temperatures, making it important to analyze this scenario. Similarly, in the space industry, circuits are subject to low temperatures and ionizing radiation, a phenomenon that can be analyzed through the influence of charges in the oxide and at the interface. (AU)