Design, fabrication and characterization of FinFET transistors
Nanodevices behavior on MOSFET technology and/or compatible technologies
Study of proton radiation effects in SOI MOSFETs multiple gates transistors
| Grant number: | 08/04920-9 |
| Support Opportunities: | Research Grants - Meeting - Brazil |
| Start date: | September 01, 2008 |
| End date: | September 04, 2008 |
| Field of knowledge: | Engineering - Electrical Engineering - Electrical, Magnetic and Electronic Circuits |
| Principal Investigator: | Renato Camargo Giacomini |
| Grantee: | Renato Camargo Giacomini |
| Host Institution: | Centro Universitário FEI (UNIFEI). Campus de São Bernardo do Campo. São Bernardo do Campo , SP, Brazil |
| Articles published in Agência FAPESP Newsletter about the research grant: |
| More itemsLess items |
| TITULO |
| Articles published in other media outlets ( ): |
| More itemsLess items |
| VEICULO: TITULO (DATA) |
| VEICULO: TITULO (DATA) |