Study of proton radiation effects in SOI MOSFETs multiple gates transistors

• Grant number: 11/03864-0
• Support Opportunities: Scholarships in Brazil - Master
• Start date: March 01, 2012
• End date: January 31, 2014
• Field of knowledge: Engineering - Electrical Engineering - Electrical Materials
• Principal Investigator: Paula Ghedini Der Agopian
• Grantee: Caio Cesar Mendes Bordallo
• Host Institution: Centro Universitário FEI (UNIFEI). Campus de São Bernardo do Campo. São Bernardo do Campo , SP, Brazil
• Associated research grant: 08/05792-4 - Design, Fabrication and Characterization of FinFET Transistors, AP.TEM

Abstract

As devices are scaled down, the charge control in the channel region becomes more difficult. Silicon-On-Insulator (SOI) multiple gate devices appear as an alternative to replace planar-transistor, as it provides better charge control and, consequently, higher short-channel effects (SCE) immunity. Besides the improved SCE control, it is known that SOI technology presents a better response for radiation effects when compared to conventional MOSFETs. Focusing on space applications, proton radiation is one of the most important effects to be studied.In this work, a theoretical and experimental study of the proton radiation influence on SOI multiple gate devices is proposed, aiming to combine the advantage of the higher radiation immunity of SOI technology with the better performance of multiple gate devices. (AU)