Study and Application of Noise in Advanced Transistors

• Grant number: 13/12415-0
• Support Opportunities: Scholarships in Brazil - Post-Doctoral
• Start date: September 01, 2013
• End date: September 30, 2013
• Field of knowledge: Engineering - Electrical Engineering
• Principal Investigator: João Antonio Martino
• Grantee: Maria Glória Caño de Andrade
• Host Institution: Escola Politécnica (EP). Universidade de São Paulo (USP). São Paulo , SP, Brazil

Abstract

The proposed project is a contribution for technological development of micro and nanoelectronics in Brazil, since it seeks to implement a Noise measure system for advanced transistors in the country.Low-Frequency (LF) noise will be experimentally investigated and the origin of the noise will be studied in order to understand the physical mechanisms involved in this type of noise. Generally, the signal spectra for Bulk and DTMOS are composed of number fluctuations related flicker noise with on top generation and recombination noise humps, which become more pronounced at higher gate voltage. The methodology for development of this work will consist of three main parts: Firstly will be realized the implementation of an analyzer and amplifier noise system which will be calibrated from the results of the measurements obtained in the Interuniversity microelectronic center of (Imec / Belgium). Additionally, an analysis will be performed through experimental measurements in advanced transistor, that is, non-planar structures, such as Bulk, DTMOS and SOI transistors with multiple gate (also called FinFET or 3D transistor), and planar structures with extremely thin buried oxide called UTBOX (Ultra thin Buried Oxide) produced with new types of materials, innovative techniques of manufacturing, different sizes and configurations. Finally, the results analysis will be complemented through two-dimensional (2D) and three-dimensional (3D) numerical simulation.