Floating body and coupling effects in ultrathin body and buried oxide FDSOI MOSFETs

• Grant number: 14/13664-7
• Support Opportunities: Scholarships abroad - Research Internship - Doctorate
• Start date: November 19, 2014
• End date: July 16, 2015
• Field of knowledge: Engineering - Electrical Engineering
• Principal Investigator: João Antonio Martino
• Grantee: Katia Regina Akemi Sasaki
• Supervisor: Sorin Cristoloveanu
• Host Institution: Escola Politécnica (EP). Universidade de São Paulo (USP). São Paulo , SP, Brazil
• Institution abroad: Micro and Nanotechnology Innovation Campus (MINATEC), France
• Associated to the scholarship: 13/13690-5 - Study of SOI MOSFETs transistors with ultra-thin silicon film body and buried oxide at high temperatures, BP.DR

Abstract

In order to overcome the current limits for the devices' scaling, UTBB SOI MOSFET (Ultra-Thin-Body-and-Buried-oxide Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect-Transistor) technology combined with the dynamic threshold voltage technique has been studied as a possible solution to reduce short channel effects and further improve the performance of these transistors. This is due to the stronger back gate coupling associated with the advantage of obtaining a higher ON state current and a lower OFF state current.These devices have also been studied for memory applications, where the floating body is one of the most important mechanisms for their working.Thus, this work supervised by Prof. Sorin Cristoloveanu aims to study the influence of the floating body and coupling effects on UTBB SOI MOSFET in advanced devices provided by MINATEC/France. It will be studied the main electrical parameters (digital and analog), from experimental data with some numerical simulations, in order to better understand the influence of the floating body and the coupling in advanced UTBB SOI MOSFET. (AU)