Impact of III-V materials on tunneling field effect transistor (TFET) operating at different temperatures

• Grant number: 15/09352-2
• Support Opportunities: Scholarships abroad - Research Internship - Doctorate
• Start date: October 01, 2015
• End date: September 30, 2016
• Field of knowledge: Engineering - Electrical Engineering - Electrical, Magnetic and Electronic Measurements, Instrumentation
• Principal Investigator: Paula Ghedini Der Agopian
• Grantee: Caio Cesar Mendes Bordallo
• Supervisor: Cor Claeys
• Host Institution: Escola Politécnica (EP). Universidade de São Paulo (USP). São Paulo , SP, Brazil
• Institution abroad: IMEC Belgium, Belgium
• Associated to the scholarship: 13/22594-0 - Study of tunnel field effect transistors behavior operating at different temperatures, BP.DR

Abstract

In order to continuing scaling devices, new technologies have been studied as an alternative to conventional CMOS. One of devices that can overcome the limitations of MOSFET transistors is the Tunnel-FET (TFET) that can provide very low off state current and a subthreshold swing lower than the 60 mV/dec at room temperature, the theoretical limit for MOS technology. In order to improve the on state current, III-V materials appear as a promising substitute for the source material of TFETs because its lower bandgap can increase the band to band tunneling promoting higher on state drain current and consequently improving the devices characteristics.This work, supervised by Prof. Dr. Cor Claeys, aims to study the influence of III-V materials in the source of TFETs on the electrical performance of advanced devices fabricated by imec/Belgium.In this work the main electrical parameters will be studied focusing on the analyzes of analog and noise parameters from experimental data, in order to better understand the influence of the use of III-V materials in the source of advanced TFET devices. (AU)