Fabrication of ReRAM memory devices based on CuxS and COS thin films

• Grant number: 16/17302-8
• Support Opportunities: Scholarships in Brazil - Post-Doctoral
• Start date: March 01, 2017
• End date: February 28, 2019
• Field of knowledge: Engineering - Materials and Metallurgical Engineering - Nonmetallic Materials
• Agreement: Coordination of Improvement of Higher Education Personnel (CAPES)
• Principal Investigator: Carlos Frederico de Oliveira Graeff
• Grantee: Mirko Congiu
• Host Institution: Faculdade de Ciências (FC). Universidade Estadual Paulista (UNESP). Campus de Bauru. Bauru , SP, Brazil
• Associated research grant: 13/07296-2 - CDMF - Center for the Development of Functional Materials, AP.CEPID

Abstract

This postdoc project consists on the study and application of thin films of copper and cobalt sulphide (CoS, Cu2-xS and CuS) as active layers of memristors. The study will be focused on the manufacture of multi-layer devices, whose function is to store information over time. The candidate will apply the deposition techniques, developed during his PhD (processo FAPESP 2013/07396-7), for the fabrication of novel devices based on cheap and abundant materials. In order to investigate and optimize methods for large-scale fabrication, printing processes will be focused in this study. The proposed devices are based on a two-terminal structure: a sandwich of two different semiconductors. One of the first objective of this project is to study the interfaces between CuS and its non-stoichiometric phase Cu2-xS. These materials can be printed directly on the substrate sequentially. Also the junctions between CoS and CuS or Cu2-xS will be considered. All devices will be characterized using the most modern techniques such as electrochemical impedance spectroscopy and cyclic voltammetry. The devices will be also implemented in an experimental electronic system based on a microcontroller. The real application in electronic circuits could be a valid diagnostic instrument to show the real performance of the considered materials. This project benefits from the scientific collaboration with the Italian institution Consiglio Nazionale delle Ricerche (CNR-ISM, Montelibretti, Roma, Italy). (AU)

Scientific publications

(6)

(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)

BONOMO, MATTEO; CONGIU, MIRKO; DE MARCO, MARIA LETIZIA; DOWLING, DENIS P.; DI CARLO, ALDO; GRAEFF, CARLOS F. O.; DINI, DANILO. Limits on the use of cobalt sulfide as anode of p-type dye-sensitized solar cells. JOURNAL OF PHYSICS D-APPLIED PHYSICS, v. 50, n. 21, JUN 1 2017. (16/17302-8)

BORATTO, MIGUEL H.; RAMOS, JR., ROBERTO A.; CONGIU, MIRKO; GRAEFF, CARLOS F. O.; SCALVI, LUIS V. A.. Memristive behavior of the SnO2/TiO2 interface deposited by sol-gel. Applied Surface Science, v. 410, p. 278-281, JUL 15 2017. (16/17302-8)

CONGIU, MIRKO; BORATTO, MIGUEL H.; GRAEFF, CARLOS F. O.. A Synaptic Electrochemical Memristor Based on the Cu2+/Zn2+ Cation Exchange in Zn:CdS Thin Films. CHEMISTRYSELECT, v. 3, n. 34, p. 9794-9802, SEP 14 2018. (16/17302-8, 13/25028-5, 08/57872-1)

CONGIU, MIRKO; BONOMO, MATTEO; DI GIROLAMO, DIEGO; GRAEFF, CARLOS F. O.; MALERBA, CLAUDIA; VALENTINI, MATTEO; MITTIGA, ALBERTO; DINI, DANILO. Towards an ink-based method for the deposition of ZnxCd1-xS buffer layers in CZTS solar cells. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, v. 31, n. 3, JAN 2020. (16/17302-8)

BORATTO, MIGUEL H.; LINHARES, ALEXANDRO A.; CONGIU, MIRKO; BATAGIN-NETO, AUGUSTO; PLA-CID, CRISTIANI C.; PASA, ANDRE A.; GRAEFF, CARLOS F. O.. Cu2+ cation-exchange in ZnxCd1-xS thin films for neuromorphic devices. Applied Surface Science, v. 537, JAN 30 2021. (16/17302-8, 13/07296-2, 17/20809-0)

BORATTO, MIGUEL H.; CONGIU, MIRKO; DOS SANTOS, STEVAN B. O.; SCALVI, LUIS V. A.. Annealing temperature influence on sol-gel processed zirconium oxide thin films for electronic applications. CERAMICS INTERNATIONAL, v. 44, n. 9, p. 10790-10796, JUN 15 2018. (16/16423-6, 16/17302-8)