| Full text | |
| Author(s): Show less - |
Balanta, M. A. G.
;
Kopaczek, J.
;
Orsi Gordo, V.
;
Santos, B. H. B.
;
Rodrigues, A. D.
;
Galeti, H. V. A.
;
Richards, R. D.
;
Bastiman, F.
;
David, J. P. R.
;
Kudrawiec, R.
;
Galvao Gobato, Y.
Total Authors: 11
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| Document type: | Journal article |
| Source: | JOURNAL OF PHYSICS D-APPLIED PHYSICS; v. 49, n. 35 SEP 7 2016. |
| Web of Science Citations: | 7 |
| Abstract | |
Raman spectroscopy and magneto-photoluminescence measurements under high magnetic fields were used to investigate the optical and spin properties of GaBiAs/GaAs multiple quantum wells (MQWs). An anomalous negative diamagnetic energy shift was observed at higher temperatures and higher laser intensities, which was associated to a sign inversion of hole effective mass in these structures. In addition, an enhancement of the polarization degree with decreasing of laser intensity was observed (experimental condition where the emission is dominated by localized excitons). This effect was explained by changes of spin relaxation and exciton recombination times due to exciton localization by disorder. (AU) | |
| FAPESP's process: | 12/24055-6 - Optical, electrical and spin properties of semiconductor nanostructures and nanodevices |
| Grantee: | Yara Galvão Gobato |
| Support Opportunities: | Regular Research Grants |
| FAPESP's process: | 16/07239-7 - 33rd International Conference on the Physics of Semiconductors |
| Grantee: | Yara Galvão Gobato |
| Support Opportunities: | Research Grants - Meeting - Abroad |
| FAPESP's process: | 14/50513-7 - Tailoring the transport and optical properties if III-Bi-V nanostructures for advanced photonic devices |
| Grantee: | Helder Vinícius Avanço Galeti |
| Support Opportunities: | Regular Research Grants |