Voltage- and Light-Controlled Spin Properties of a Two-Dimensional Hole Gas in p-Type GaAs/AlAs Resonant Tunneling Diodes

Author(s)

Galeti, H. V. A. ^[1] ; Galvao Gobato, Y. ^[2] ; Brasil, M. J. S. P. ^[3] ; Taylor, D. ^[4] ; Henini, M. ^[4]

Affiliation

^[1] Univ Fed Sao Carlos, Dept Engn Eletr, BR-13560905 Sao Carlos, SP - Brazil

^[2] Univ Fed Sao Carlos, Dept Fis, BR-13560905 Sao Carlos, SP - Brazil

^[3] Univ Estadual Campinas, Inst Fis Gleb Wataghin, BR-13083859 Campinas, SP - Brazil

^[4] Univ Nottingham, Nottingham Nanotechnol & Nanosci Ctr, Sch Phys & Astron, Nottingham NG7 2RD - England

• Document type: Journal article
• Source: JOURNAL OF ELECTRONIC MATERIALS; v. 47, n. 3, p. 1780-1785, MAR 2018.
• Web of Science Citations: 0

Abstract

We have investigated the spin properties of a two-dimensional hole gas (2DHG) formed at the contact layer of a p-type GaAs/AlAs resonant tunneling diode (RTD). We have measured the polarized-resolved photoluminescence of the RTD as a function of bias voltage, laser intensity and external magnetic field up to 15T. By tuning the voltage and the laser intensity, we are able to change the spin-splitting from the 2DHG from almost 0 meV to 5 meV and its polarization degree from - 40% to + 50% at 15T. These results are attributed to changes of the local electric field applied to the two-dimensional gas which affects the valence band and the hole Rashba spin-orbit effect. (AU)

• FAPESP's process: 12/24055-6 - Optical, electrical and spin properties of semiconductor nanostructures and nanodevices
• Grantee: Yara Galvão Gobato
• Support type: Regular Research Grants
• FAPESP's process: 16/10668-7 - Optical and Transport Properties of two-dimensional semicondutors based on transition metal dichalcogenides
• Grantee: Yara Galvão Gobato
• Support type: Regular Research Grants