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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Voltage- and Light-Controlled Spin Properties of a Two-Dimensional Hole Gas in p-Type GaAs/AlAs Resonant Tunneling Diodes

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Galeti, H. V. A. [1] ; Galvao Gobato, Y. [2] ; Brasil, M. J. S. P. [3] ; Taylor, D. [4] ; Henini, M. [4]
Total Authors: 5
[1] Univ Fed Sao Carlos, Dept Engn Eletr, BR-13560905 Sao Carlos, SP - Brazil
[2] Univ Fed Sao Carlos, Dept Fis, BR-13560905 Sao Carlos, SP - Brazil
[3] Univ Estadual Campinas, Inst Fis Gleb Wataghin, BR-13083859 Campinas, SP - Brazil
[4] Univ Nottingham, Nottingham Nanotechnol & Nanosci Ctr, Sch Phys & Astron, Nottingham NG7 2RD - England
Total Affiliations: 4
Document type: Journal article
Source: JOURNAL OF ELECTRONIC MATERIALS; v. 47, n. 3, p. 1780-1785, MAR 2018.
Web of Science Citations: 0

We have investigated the spin properties of a two-dimensional hole gas (2DHG) formed at the contact layer of a p-type GaAs/AlAs resonant tunneling diode (RTD). We have measured the polarized-resolved photoluminescence of the RTD as a function of bias voltage, laser intensity and external magnetic field up to 15T. By tuning the voltage and the laser intensity, we are able to change the spin-splitting from the 2DHG from almost 0 meV to 5 meV and its polarization degree from - 40% to + 50% at 15T. These results are attributed to changes of the local electric field applied to the two-dimensional gas which affects the valence band and the hole Rashba spin-orbit effect. (AU)

FAPESP's process: 12/24055-6 - Optical, electrical and spin properties of semiconductor nanostructures and nanodevices
Grantee:Yara Galvão Gobato
Support type: Regular Research Grants
FAPESP's process: 16/10668-7 - Optical and Transport Properties of two-dimensional semicondutors based on transition metal dichalcogenides
Grantee:Yara Galvão Gobato
Support type: Regular Research Grants