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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

A Novel Method of Synthesizing Graphene for Electronic Device Applications

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Author(s):
Galvao, Nierlly [1] ; Vasconcelos, Getulio [2] ; Pessoa, Rodrigo [1, 3] ; Machado, Joao [4] ; Guerino, Marciel [1] ; Fraga, Mariana [3] ; Rodrigues, Bruno [1, 3] ; Camus, Julien [5] ; Djouadi, Abdou [5] ; Maciel, Homero [1, 3]
Total Authors: 10
Affiliation:
[1] Inst Tecnol Aeronaut, Ctr Ciencia & Tecnol Plasmas & Mat PlasMat, BR-12228900 Sao Jose Dos Campos, SP - Brazil
[2] Inst Estudos Avancados, Photon Div, Rodovia Tamoios, BR-12228001 Sao Jose Dos Campos, SP - Brazil
[3] Univ Brasil, Rua Carolina Fonseca 235, BR-08230030 Sao Paulo, SP - Brazil
[4] Inst Nacl Pesquisas Espaciais, Associate Lab Sensors & Mat, BR-12227010 Sao Jose Dos Campos, SP - Brazil
[5] Univ Nantes, Inst Mat Jean Rouxel IMN, UMR 6502, 2 Rue Houssiniere, BP 32229, F-44322 Nantes - France
Total Affiliations: 5
Document type: Journal article
Source: MATERIALS; v. 11, n. 7 JUL 2018.
Web of Science Citations: 1
Abstract

This article reports a novel and efficient method to synthesize graphene using a thermal decomposition process. In this method, silicon carbide (SiC) thin films grown on Si(100) wafers with an AIN buffer layer were used as substrates. CO2 laser beam heating, without vacuum or controlled atmosphere, was applied for SiC thermal decomposition. The physical, chemical, morphological, and electrical properties of the laser-produced graphene were investigated for different laser energy densities. The results demonstrate that graphene was produced in the form of small islands with quality, density, and properties depending on the applied laser energy density. Furthermore, the produced graphene exhibited a sheet resistance characteristic similar to graphene grown on mono-crystalline SiC wafers, which indicates its potential for electronic device applications. (AU)

FAPESP's process: 14/18139-8 - Growth and doping studies of mono-crystalline CVD-diamond, dye-colored via discharge of high-power mW 2.45 GHz
Grantee:Mariana Amorim Fraga
Support type: Scholarships in Brazil - Post-Doctorate
FAPESP's process: 11/50773-0 - Center of excellence in physics and applications of plasmas
Grantee:Ricardo Magnus Osório Galvão
Support type: Research Projects - Thematic Grants
FAPESP's process: 18/01265-1 - Synthesis and microbiological analysis of polymer substrates coated with TiO2 and / or Al2O3 ultra-thin films by atomic layer deposition technology
Grantee:Rodrigo Savio Pessoa
Support type: Regular Research Grants
FAPESP's process: 17/18826-3 - Sustainable nanostructured materials based on biodegradable polymers and luminescent carbon nanoparticles
Grantee:Bruno Vinícius Manzolli Rodrigues
Support type: Regular Research Grants