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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Laser/Electron Irradiation on Indium Phosphide (InP) Semiconductor: Promising Pathways to In Situ Formation of Indium Nanoparticles

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Author(s):
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Assis, Marcelo [1] ; Macedo, Nadia G. [1] ; Machado, Thales R. [1] ; Ferrer, Mateus M. [2] ; Gouveia, Amanda F. [1] ; Cordoncillo, Eloisa [3] ; Torres-Mendieta, Rafael [4] ; Beltran-Mir, Hector [3] ; Minguez-Vega, Gladys [5] ; Leite, Edson R. [1, 6] ; Sambrano, Julio R. [2] ; Andres, Juan [7] ; Longo, Elson [1]
Total Authors: 13
Affiliation:
[1] Univ Fed Sao Carlos UFSCar, CDMF, POB 676, BR-13565905 Sao Carlos, SP - Brazil
[2] Sao Paulo State Univ UNESP, Modeling & Mol Simulat Grp, POB 473, BR-17033360 Bauru - Brazil
[3] UJI, Dept Inorgan & Organ Chem, Castellon de La Plana 12071 - Spain
[4] Tech Univ Liberec, Inst Nanomat Adv Technol & Innovat, Studentska 1402-2, Liberec 46117 - Czech Republic
[5] UJI, GROC UJI, INIT, Castellon de La Plana 12071 - Spain
[6] Brazilian Ctr Res Energy & Mat CNPEM, Brazilian Nanotechnol Natl Lab LNNano, BR-13083100 Campinas, SP - Brazil
[7] UJI, Dept Analyt & Phys Chem, Castellon de La Plana 12071 - Spain
Total Affiliations: 7
Document type: Journal article
Source: PARTICLE & PARTICLE SYSTEMS CHARACTERIZATION; v. 35, n. 11 NOV 2018.
Web of Science Citations: 3
Abstract

In the current study, whether femtosecond laser and electron beam irradiation of indium phosphide (InP) are ``green,{''} fast, and effective methods to produce metallic In nanoparticles is probed. High-resolution transmission electron microscopy and energy-dispersive X-ray spectroscopy are employed to investigate the formation and growth of In nanoparticles on InP. Density functional theory and quantum theory of atoms in molecules calculations are employed to reveal the nature of formation of In nanoparticles under electron beam irradiation. These results expand the fundamental understanding of the atomic processes underpinning the mechanism of In-P bond rupture during the transformation process induced by the electron irradiation of the InP crystal by increasing the total number of electrons in the bulk structure. (AU)

FAPESP's process: 16/07476-9 - Porous nanotubes of carbon and inorganic semiconductors: a computational study
Grantee:Julio Ricardo Sambrano
Support type: Regular Research Grants
FAPESP's process: 13/26671-9 - Theoretical and experimental study of multifunctional semiconductors
Grantee:Amanda Fernandes Gouveia
Support type: Scholarships in Brazil - Doctorate
FAPESP's process: 13/07296-2 - CDMF - Center for the Development of Functional Materials
Grantee:Elson Longo da Silva
Support type: Research Grants - Research, Innovation and Dissemination Centers - RIDC